BC807 datasheet, PDF - EEWORLD Datasheet

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BC807: Description800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size405KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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BC807 Overview

800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC807 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	0.8000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	SOT-23, 3 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	0.3100 W
Transistor type	Universal small signal
Minimum DC amplification factor	60
Rated crossover frequency	100 MHz

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BC807-16, -25, -40

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen-free & RoHS compliant

-500 mA, -50 V

PNP Plastic Encapsulate Transistor

FEATURES

Ideally suited for automatic insertion

Epitaxial planar die construction

Complementary to BC817 (NPN Type)

Base

SOT-23

Collector

Dim

Min

2.800

1.200

0.890

0.370

1.780

0.013

0.085

0.450

0.890

2.100

0.450

Max

3.040

1.400

1.110

0.500

2.040

0.100

0.177

0.600

1.020

2.500

0.600

Emitter

MARKING

BC807-16:5A;

BC807-25:5B;

BC807-40:5C

B S

Top View

All Dimension in mm

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Collector Power Dissipation

Junction, Storage Temperature

Symbol

CBO

CEO

EBO

, T

STG

Ratings

-50

-45

-5

-500

300

+150, -55 ~ +150

Unit

℃

CHARACTERISTICS at Ta = 25°C

Symbol

CBO

CEO

EBO

CBO

CEO

EBO

CE(sat)

BE(sat)

FE(1)

Min.

-50

-45

-5

Max.

-0.1

-0.2

-0.1

-0.7

-1.2

250

400

600

Unit

= -10 uA, I

= 0

= -10 mA, I

= 0

= -1 uA, I

= 0

= -45V, I

= 0

= -40V, I

= 0

= -4V, I

= 0

Test Conditions

= -500mA, I

= -50 mA

= -500mA, I

= -50 mA

= -1 V, I

= -100 mA

807-16

807-25

807-40

100

160

250

100

MHz

= -5 V, I

= -10 mA, f = 100MHz

01-June-2002 Rev. B

Page 1 of 2

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