M5M51008BVP-10L datasheet, PDF

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M5M51008BVP-10L: DescriptionStandard SRAM, 128KX8, 100ns, MIXMOS, PDSO32, 8 X 20 MM, TSOP-32; Categorystorage storage; File Size59KB，7 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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M5M51008BVP-10L Overview

Standard SRAM, 128KX8, 100ns, MIXMOS, PDSO32, 8 X 20 MM, TSOP-32

M5M51008BVP-10L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Mitsubishi
Parts packaging code	TSOP
package instruction	TSOP1, TSSOP32,.8,20
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	100 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	18.4 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.00005 A
Minimum standby current	2 V
Maximum slew rate	0.07 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	MIXMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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1997-3/25

MITSUBISHI LSIs

M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L,

-55LL,-70LL,-10LL

1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

DESCRIPTION

The M5M51008BP,FP,VP,RV,KV,KR are a 1048576-bit CMOS

static RAM organized as 131072 word by 8-bit which are

fabricated using high-performance triple polysilicon CMOS

technology. The use of resistive load NMOS cells and CMOS

periphery result in a high density and low power static RAM.

They are low standby current and low operation current and ideal

for the battery back-up application.

The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin

small outline package which is a high reliability and high density

surface mount device(SMD).Two types of devices are available.

VP,KV(normal lead bend type package),RV,KR(reverse lead bend

type package). Using both types of devices, it becomes very easy

to design a printed circuit board.

PIN CONFIGURATION (TOP VIEW)

16 2

14 3

12 4

2 10

1 11

0 12

1 13

2 14

3 15

GND

ADDRESS

INPUTS

ADDRESS

INPUT

2 CHIP SELECT

INPUT

WRITE CONTROL

INPUT

ADDRESS

INPUTS

OUTPUT ENABLE

INPUT

ADDRESS

INPUT

1 CHIP SELECT

INPUT

DATA

INPUTS/

M5M51008BP,FP

FEATURES

Power supply current

Type name

M5M51008BP,FP,VP,RV,KV,KR-55L

M5M51008BP,FP,VP,RV,KV,KR-70L

M5M51008BP,FP,VP,RV,KV,KR-10L

M5M51008BP,FP,VP,RV,KV,KR-55LL

M5M51008BP,FP,VP,RV,KV,KR-70LL

M5M51008BP,FP,VP,RV,KV,KR-10LL

Access time

(max)

Active

(1MHz)

(max)

stand-by

(max)

DATA

INPUTS/

OUTPUTS

55ns

70ns

100ns

55ns

70ns

100ns

OUTPUTS

15mA

100µA

(Vcc=5.5V)

Outline 32P4(P), 32P2M-A(FP)

20µA

15mA

(Vcc=5.5V)

0.3µA

(Vcc=3.0V,typ)

GND

Single +5V power supply

Low stand-by current 0.3µA (typ.)

Directly TTL compatible : All inputs and outputs

Easy memory expansion and power down by S

Data hold on +2V power supply

Three-state outputs : OR - tie capability

OE prevents data contention in the I/O bus

Common data I/O

Package

M5M51008BP

············

32pin 600mil DIP

M5M51008BFP

············

32pin 525mil SOP

M5M51008BVP,RV

············

32pin 8 X 20 mm

TSOP

M5M51008BKV,KR

············

32pin 8 X 13.4 mm

TSOP

M5M51008BVP,KV

APPLICATION

Small capacity memory units

Outline 32P3H-E(VP), 32P3K-B(KV)

M5M51008BRV,KR

GND

Outline 32P3H-F(RV), 32P3K-C(KR)

NC : NO CONNECTION

MITSUBISHI

ELECTRIC

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