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S1K

Description
1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size251KB,4 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
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S1K Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC

CYStech Electronics Corp.
Surface Mount Glass Passivated Junction Rectifiers
Reverse Voltage 50V to 1000V
Forward Current 1.0A
Spec. No. : C246SA
Issued Date : 2012.08.06
Revised Date : 2013.03.11
Page No. : 1/4
S1A thru S1M
Features
For surface mounted applications
Glass passivated junction chip
Low profile package
Built-in stain relief, ideal for automatic placement
High temperature soldering guaranteed : 260°C/10 seconds at terminals
Plastic material used carries UL flammability classification 94V-0
Mechanical Data
Case: JEDEC DO-214AC(SMA) molded plastic
Terminals: Pure tin plated, solderable per MIL-STD-750 method 2026
Polarity: Color band denotes cathode end
Mounting position : Any
Weight: 0.064 gram, 0.002 ounce
Maximum Ratings and Electrical Characteristics
(
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or
S1D
200
140
200
Type
S1G
400
280
400
1.1
1
30
5
50
1.8
12
50
90
-55 ~ +150
S1J
600
420
600
S1K
800
560
800
S1M
1000
700
1000
Units
V
V
V
V
A
A
μA
μs
pF
°
C/W
inductive load.
Parameter
For capacitive load, derate current by 20%. )
Symbol
V
RRM
V
RMS
V
R
V
F
I
F(AV)
I
FSM
I
R
trr
C
J
R
θJA
R
θJL
T
J
;T
STG
S1A
50
35
50
S1B
100
70
100
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum instantaneous forward voltage, I
F
=1A
Maximum average forward rectified current, see
Fig. 1
Peak forward surge current @8.3ms single half
sine wave superimposed on rated load
(JEDEC method) T
L
=90°C
Maximum DC reverse current at T
A
=25
°
C
Rated DC blocking voltage
T
A
=125
°
C
Typical reverse recovery time
(Note 1)
Typical junction capacitance @ f=1MHz and
applied 4V reverse voltage
Typical thermal resistance
(Note 2)
Operating junction and Storage temperature range
Note: 1.Reverse recovery test conditions : I
F
=0.5A, I
R
=1A, I
RR
=0.25A
2.Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2”×0.2”(5mm×5mm)
copper pad areas.
S1A thru S1M
CYStek Product Specification

S1K Related Products

S1K S1A S1B S1D S1G S1J S1M
Description 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals - 2 2 - 2 2 2
Number of components - 1 1 - 1 1 1
Processing package description - ROHS COMPLIANT, PLASTIC, SMB, 2 PIN GREEN, PLASTIC, SMA, 2 PIN - - GREEN, PLASTIC, SMA, 2 PIN Plastic, SMA, 2 PIN
Lead-free - Yes Yes - - Yes Yes
EU RoHS regulations - Yes Yes - - Yes Yes
state - ACTIVE ACTIVE ACTIVE DISCONTINUED ACTIVE DISCONTINUED
packaging shape - RECTANGULAR Rectangle - Rectangle Rectangle Rectangle
Package Size - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount - Yes Yes - Yes Yes Yes
Terminal form - C BEND C BEND - C BEND C BEND C BEND
terminal coating - NOT SPECIFIED PURE Tin - - PURE Tin tin/silver
Terminal location - DUAL pair - pair pair pair
Packaging Materials - PLASTIC/EPOXY Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure - SINGLE single - single single single
Diode component materials - SILICON silicon - silicon silicon silicon
Diode type - SIGNAL DIODE Signal diode SIGNAL DIODE Signal diode Signal diode Signal diode
Maximum repetitive peak reverse voltage - 50 V 100 V - 400 V 600 V 1000 V
Maximum average forward current - 1 A 1 A - 1 A 1 A 1 A

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