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S1D

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size251KB,4 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
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S1D Overview

SIGNAL DIODE

S1D Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSIGNAL DIODE
CYStech Electronics Corp.
Surface Mount Glass Passivated Junction Rectifiers
Reverse Voltage 50V to 1000V
Forward Current 1.0A
Spec. No. : C246SA
Issued Date : 2012.08.06
Revised Date : 2013.03.11
Page No. : 1/4
S1A thru S1M
Features
For surface mounted applications
Glass passivated junction chip
Low profile package
Built-in stain relief, ideal for automatic placement
High temperature soldering guaranteed : 260°C/10 seconds at terminals
Plastic material used carries UL flammability classification 94V-0
Mechanical Data
Case: JEDEC DO-214AC(SMA) molded plastic
Terminals: Pure tin plated, solderable per MIL-STD-750 method 2026
Polarity: Color band denotes cathode end
Mounting position : Any
Weight: 0.064 gram, 0.002 ounce
Maximum Ratings and Electrical Characteristics
(
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or
S1D
200
140
200
Type
S1G
400
280
400
1.1
1
30
5
50
1.8
12
50
90
-55 ~ +150
S1J
600
420
600
S1K
800
560
800
S1M
1000
700
1000
Units
V
V
V
V
A
A
μA
μs
pF
°
C/W
inductive load.
Parameter
For capacitive load, derate current by 20%. )
Symbol
V
RRM
V
RMS
V
R
V
F
I
F(AV)
I
FSM
I
R
trr
C
J
R
θJA
R
θJL
T
J
;T
STG
S1A
50
35
50
S1B
100
70
100
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum instantaneous forward voltage, I
F
=1A
Maximum average forward rectified current, see
Fig. 1
Peak forward surge current @8.3ms single half
sine wave superimposed on rated load
(JEDEC method) T
L
=90°C
Maximum DC reverse current at T
A
=25
°
C
Rated DC blocking voltage
T
A
=125
°
C
Typical reverse recovery time
(Note 1)
Typical junction capacitance @ f=1MHz and
applied 4V reverse voltage
Typical thermal resistance
(Note 2)
Operating junction and Storage temperature range
Note: 1.Reverse recovery test conditions : I
F
=0.5A, I
R
=1A, I
RR
=0.25A
2.Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2”×0.2”(5mm×5mm)
copper pad areas.
S1A thru S1M
CYStek Product Specification

S1D Related Products

S1D S1A S1B S1G S1J S1K S1M
Description SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
state ACTIVE ACTIVE ACTIVE DISCONTINUED ACTIVE - DISCONTINUED
Diode type SIGNAL DIODE SIGNAL DIODE Signal diode Signal diode Signal diode - Signal diode
Number of terminals - 2 2 2 2 - 2
Number of components - 1 1 1 1 - 1
Processing package description - ROHS COMPLIANT, PLASTIC, SMB, 2 PIN GREEN, PLASTIC, SMA, 2 PIN - GREEN, PLASTIC, SMA, 2 PIN - Plastic, SMA, 2 PIN
Lead-free - Yes Yes - Yes - Yes
EU RoHS regulations - Yes Yes - Yes - Yes
packaging shape - RECTANGULAR Rectangle Rectangle Rectangle - Rectangle
Package Size - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
surface mount - Yes Yes Yes Yes - Yes
Terminal form - C BEND C BEND C BEND C BEND - C BEND
terminal coating - NOT SPECIFIED PURE Tin - PURE Tin - tin/silver
Terminal location - DUAL pair pair pair - pair
Packaging Materials - PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy
structure - SINGLE single single single - single
Diode component materials - SILICON silicon silicon silicon - silicon
Maximum repetitive peak reverse voltage - 50 V 100 V 400 V 600 V - 1000 V
Maximum average forward current - 1 A 1 A 1 A 1 A - 1 A
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