KSA1625
KSA1625
High Voltage Switch
• High Breakdown Voltage
• High Speed Switching
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
I
CP
P
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Ratings
-400
-400
-7
-0.25
-0.5
-1.0
0.75
2
150
-55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Dc Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= -1mA, I
B
=0
V
CB
= -400V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -5V, I
C
= -50mA
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -10V, I
C
= -10mA
V
CB
= -10V, f=1MHz
I
C
= -100mA, R
L
=1.5kΩ
I
B1
=- I
B2
= -10mA
V
CC
= -150V
10
25
1
5
1
40
Min.
-400
Max.
-1
-1
200
-1
-1.2
A
V
MHz
pF
µs
µs
µs
Units
V
µA
µA
h
FE
Classification
Classification
h
FE
M
40 ~ 80
L
60 ~ 120
K
100 ~ 200
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSA1625
Typical Characteristics
-0.5
1000
V
CE
= - 5V
Ic[A], COLLECTOR CURRENT
-0.4
mA
I
B
=-200
0 mA
I =-18
B
h
FE
, DC CURRENT GAIN
I
B
=-160mA
I
B
=-140mA
-0.3
100
I
B
=-120mA
I
B
=-100mA
-0.2
I
B
=-80mA
I
B
=-60mA
10
-0.1
I
B
=-40mA
I
B
=-20mA
-0
-2
-4
-6
-8
-10
1
-0.1
-1
-10
-100
-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
I
C
= - 10 I
B
1000
f=1.0MHz
-1
C
ob
[pF], CAPACITANCE
-10
-100
-1000
V
BE
(sat)
100
-0.1
V
CE
(sat)
10
-0.01
-0.1
-1
1
-0.1
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
-10
V
CE
= -10V
Ta=25 C
Single Pulse
I
C
MAX(Pulse)
1m
s
10
0
µ
s
10
µ
s
o
I
C
[A], COLLECTOR CURRENT
-1
100
DC
-0.1
10
V
CEO
(sus)MAX
-0.01
1
-1
-10
-100
-1000
-0.001
-1
-10
-100
-1000
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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not intended to be an exhaustive list of all such trademarks.
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E
2
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®
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®
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SyncFET™
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UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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