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DISCRETE SEMICONDUCTORS
DATA SHEET
ndbook, halfpage
M3D087
BSP19; BSP20
NPN high-voltage transistors
Product data sheet
Supersedes data of 1997 Mar 03
1999 Jun 01
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
FEATURES
•
Low current (max. 100 mA)
•
High voltage (max. 350 V).
APPLICATIONS
•
Switching and amplification
•
Especially used in telephony and automotive
applications.
DESCRIPTION
NPN transistor in a SOT223 plastic package.
PNP complement: BSP16.
1
Top view
2
3
handbook, halfpage
BSP19; BSP20
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
4
2, 4
1
3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BSP19
BSP20
V
CEO
collector-emitter voltage
BSP19
BSP20
V
EBO
I
C
I
B
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
emitter-base voltage
collector current (DC)
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−65
−
−65
350
250
5
100
100
1.2
+150
150
+150
V
V
V
mA
mA
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
400
300
V
V
MIN.
MAX.
UNIT
1999 Jun 01
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
BSP19; BSP20
VALUE
104
23
UNIT
K/W
K/W
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
CONDITIONS
I
E
= 0; V
CE
= 300 V
I
C
= 0; V
EB
= 5 V
V
CE
= 10 V; I
C
= 20 mA
I
C
= 50 mA; I
B
= 4 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
V
CE
= 10 V; I
C
= 10 mA; f = 100 MHz
−
−
40
−
−
70
MIN.
MAX.
20
100
−
0.5
2.5
−
V
pF
MHz
UNIT
nA
nA
1999 Jun 01
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BSP19; BSP20
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 Jun 01
4
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