BCW65CS62Z datasheet, PDF - EEWORLD Datasheet

BCW65CS62Z: Description1000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB; CategoryDiscrete semiconductor The transistor; File Size127KB，5 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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BCW65CS62Z Overview

1000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

Parameter Name	Attribute value
Maker	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Maximum off time (toff)	400 ns
Maximum opening time (tons)	100 ns

	BCW65CS62Z	BCW65CD87Z	BCW65CL99Z
Description	1000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	1000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	1000mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Maker	Texas Instruments	Texas Instruments	Texas Instruments
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A
Collector-emitter maximum voltage	32 V	32 V	32 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50	50
JEDEC-95 code	TO-236AB	TO-236AB	TO-236AB
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz
Maximum off time (toff)	400 ns	400 ns	400 ns
Maximum opening time (tons)	100 ns	100 ns	100 ns

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