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MWS5114D2

Description
1KX4 STANDARD SRAM, 250ns, CDIP18, SIDE BRAZED, CERAMIC, DIP-18
Categorystorage    storage   
File Size29KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

MWS5114D2 Overview

1KX4 STANDARD SRAM, 250ns, CDIP18, SIDE BRAZED, CERAMIC, DIP-18

MWS5114D2 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeDIP
package instructionSIDE BRAZED, CERAMIC, DIP-18
Contacts18
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time250 ns
I/O typeCOMMON
JESD-30 codeR-CDIP-T18
JESD-609 codee0
memory density4096 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of terminals18
word count1024 words
character code1000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1KX4
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP18,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height5.08 mm
Maximum standby current0.00005 A
Minimum standby current2 V
Maximum slew rate0.008 mA
Maximum supply voltage (Vsup)6.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
MWS5114
March 1997
1024-Word x 4-Bit
LSI Static RAM
Description
The MWS5114 is a 1024 word by 4-bit static random access
memory that uses the ion-implanted silicon gate comple-
mentary MOS (CMOS) technology. It is designed for use in
memory systems where low power and simplicity in use are
desirable. This type has common data input and data output
and utilizes a single power supply of 4.5V to 6.5V.
The MWS5114 is supplied in 18 lead, hermetic, dual-in-line
sidebrazed ceramic packages (D suffix) and in 18 lead dual-
in-line plastic packages (E suffix).
Features
• Fully Static Operation
• Industry Standard 1024 x 4 Pinout (Same as Pinouts
for 6514, 2114, 9114, and 4045 Types)
• Common Data Input and Output
• Memory Retention for Standby Battery Voltage as Low
as 2V Min
• All Inputs and Outputs Directly TTL Compatible
• Three-State Outputs
• Low Standby and Operating Power
Ordering Information
200ns
MWS5114E3
MWS5114D3
MWS5114D3X
250ns
MWS5114E2
MWS5114E2X
MWS5114D2
300ns
MWS5114E1
MWS5114D1
TEMPERATURE RANGE
0
o
C to +70
o
C
0
o
C to +70
o
C
PACKAGE
PDIP
Burn-In
SBDIP
Burn-In
PKG. NO.
E18.3
E18.3
D18.3
D18.3
Pinout
MWS5114
(PDIP, SBDIP)
TOP VIEW
A6
A5
A4
A3
A0
A1
A2
CS
V
SS
1
2
3
4
5
6
7
8
9
18 V
DD
17 A7
16 A8
15 A9
14 I/O1
13 I/O2
12 I/O3
11 I/O4
10 WE
OPERATIONAL MODES
FUNCTION
Read
Write
Not Selected
CS
0
0
1
WE
1
0
X
DATA PINS
Output: Dependent on data
Input
High Impedance
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
1325.2
6-160

MWS5114D2 Related Products

MWS5114D2 MWS5114D3X MWS5114D3 MWS5114E2 MWS5114D1 MWS5114E1 MWS5114E2X
Description 1KX4 STANDARD SRAM, 250ns, CDIP18, SIDE BRAZED, CERAMIC, DIP-18 1KX4 STANDARD SRAM, 200ns, CDIP18, SIDE BRAZED, CERAMIC, DIP-18 1KX4 STANDARD SRAM, 200ns, CDIP18 1KX4 STANDARD SRAM, 250ns, PDIP18, PLASTIC, DIP-18 1KX4 STANDARD SRAM, 300ns, CDIP18 1KX4 STANDARD SRAM, 300ns, PDIP18 1KX4 STANDARD SRAM, 250ns, PDIP18
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code DIP DIP DIP DIP DIP DIP DIP
package instruction SIDE BRAZED, CERAMIC, DIP-18 DIP, DIP18,.3 DIP, DIP18,.3 PLASTIC, DIP-18 SIDE BRAZED, CERAMIC, DIP-18 PLASTIC, DIP-18 PLASTIC, DIP-18
Contacts 18 18 18 18 18 18 18
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant _compli _compli _compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 250 ns 200 ns 200 ns 250 ns 300 ns 300 ns 250 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-CDIP-T18 R-CDIP-T18 R-CDIP-T18 R-PDIP-T18 R-CDIP-T18 R-PDIP-T18 R-PDIP-T18
JESD-609 code e0 e0 e0 e0 e0 e0 e0
memory density 4096 bit 4096 bit 4096 bit 4096 bit 4096 bi 4096 bi 4096 bi
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 4 4 4 4 4 4 4
Number of functions 1 1 1 1 1 1 1
Number of terminals 18 18 18 18 18 18 18
word count 1024 words 1024 words 1024 words 1024 words 1024 words 1024 words 1024 words
character code 1000 1000 1000 1000 1000 1000 1000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 1KX4 1KX4 1KX4 1KX4 1KX4 1KX4 1KX4
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP DIP DIP DIP DIP DIP DIP
Encapsulate equivalent code DIP18,.3 DIP18,.3 DIP18,.3 DIP18,.3 DIP18,.3 DIP18,.3 DIP18,.3
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.00005 A 0.00005 A 0.00005 A 0.00005 A 0.000125 A 0.000125 A 0.00005 A
Minimum standby current 2 V 2 V 2 V 2 V 2 V 2 V 2 V
Maximum slew rate 0.008 mA 0.008 mA 0.008 mA 0.008 mA 0.008 mA 0.008 mA 0.008 mA
Maximum supply voltage (Vsup) 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V 6.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO NO NO NO NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm 2.54 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Other features - - LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS - LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS LOW POWER STANDBY MODE; TTL COMPATIBLE INPUTS/OUTPUTS
Number of ports - - 1 - 1 1 1
Exportable - - NO - NO NO NO
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