MWS5114
March 1997
1024-Word x 4-Bit
LSI Static RAM
Description
The MWS5114 is a 1024 word by 4-bit static random access
memory that uses the ion-implanted silicon gate comple-
mentary MOS (CMOS) technology. It is designed for use in
memory systems where low power and simplicity in use are
desirable. This type has common data input and data output
and utilizes a single power supply of 4.5V to 6.5V.
The MWS5114 is supplied in 18 lead, hermetic, dual-in-line
sidebrazed ceramic packages (D suffix) and in 18 lead dual-
in-line plastic packages (E suffix).
Features
• Fully Static Operation
• Industry Standard 1024 x 4 Pinout (Same as Pinouts
for 6514, 2114, 9114, and 4045 Types)
• Common Data Input and Output
• Memory Retention for Standby Battery Voltage as Low
as 2V Min
• All Inputs and Outputs Directly TTL Compatible
• Three-State Outputs
• Low Standby and Operating Power
Ordering Information
200ns
MWS5114E3
MWS5114D3
MWS5114D3X
250ns
MWS5114E2
MWS5114E2X
MWS5114D2
300ns
MWS5114E1
MWS5114D1
TEMPERATURE RANGE
0
o
C to +70
o
C
0
o
C to +70
o
C
PACKAGE
PDIP
Burn-In
SBDIP
Burn-In
PKG. NO.
E18.3
E18.3
D18.3
D18.3
Pinout
MWS5114
(PDIP, SBDIP)
TOP VIEW
A6
A5
A4
A3
A0
A1
A2
CS
V
SS
1
2
3
4
5
6
7
8
9
18 V
DD
17 A7
16 A8
15 A9
14 I/O1
13 I/O2
12 I/O3
11 I/O4
10 WE
OPERATIONAL MODES
FUNCTION
Read
Write
Not Selected
CS
0
0
1
WE
1
0
X
DATA PINS
Output: Dependent on data
Input
High Impedance
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
1325.2
6-160
MWS5114
Functional Block Diagram
A
4
V
DD
A
5
V
SS
MEMORY ARRAY
64 ROWS
64 COLUMNS
A
6
ROW
SELECT
A
7
A
8
A
9
I/O
1
INPUT
DATA
CONTROL
COLUMN
I/O CIRCUITS
COLUMN SELECT
I/O
2
I/O
3
I/O
4
A
0
A
1
A
2
A
3
CS
ENABLE
WE
6-161
MWS5114
Absolute Maximum Ratings
DC Supply Voltage Range, (V
DD
)
(All Voltages Referenced to V
SS
Terminal) . . . . . . . . -0.5V to +7V
Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to V
DD
+0.5V
DC Input Current, Any One Input.
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
Thermal Information
Thermal Resistance (Typical)
θ
JA
(
o
C/W)
θ
JC
(
o
C/W)
Plastic DIP Package . . . . . . . . . . . . . .
75
N/A
SBDIP Package . . . . . . . . . . . . . . . . . .
75
20
Operating Temperature Range (T
A
)
Package Type D. . . . . . . . . . . . . . . . . . . . . . . . . .-55
o
C to +125
o
C
Package Type E . . . . . . . . . . . . . . . . . . . . . . . . . . .-40
o
C to +85
o
C
Maximum Storage Temperature Range (T
STG
) . . .-65
o
C to +150
o
C
Maximum Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150
o
C
Maximum Lead Temperature. . . . . . . . . . . . . . . . . . . . . . . . . +265
o
C
Recommended Operating Conditions
At T
A
= Full Package Temperature Range. For maximum reliability, operating
conditions should be selected so that operation is always within the following ranges:
LIMITS
ALL TYPES
PARAMETER
DC Operating Voltage Range
Input Voltage Range
MIN
4.5
V
SS
MAX
6.5
V
DD
UNITS
V
V
Static Electrical Specifications
At T
A
= 0
o
C to +70
o
C, V
DD
=
±5%,
Except as Noted
LIMITS
MWS5114-3
MWS5114-2
(NOTE 1)
TYP
75
MWS5114-1
(NOTE 1)
TYP
75
CONDITIONS
PARAMETER
Quiescent
Device
Current
Output Low
(Sink) Current
Output High
(Source)
Current
Output Voltage
Low-Level
Output Voltage
High-Level
Input Low
Voltage
Input High
Voltage
Input Leakage
Current (Note 2)
Operating
Current (Note 3)
SYMBOL
IDD
V
O
(V)
-
V
IN
(V)
0, 5
V
DD
(V)
5
MIN
-
(NOTE 1)
TYP
75
MAX
100
MIN
-
MAX
100
MIN
-
MAX
250
UNITS
µA
I
OL
0.4
0, 5
5
2
4
-
2
4
-
2
4
-
mA
I
OH
4.6
0, 5
5
-0.4
-1
-
-0.4
-1
-
-0.4
-1
-
mA
VOL
-
0, 5
5
-
0
0.1
-
0
0.1
-
0
0.1
V
VOH
-
0, 5
5
4.9
5
-
4.9
5
-
4.9
5
-
V
V
IL
0.5,
4.5
0.5,
4.5
-
-
5
-
1.2
0.8
-
1.2
0.8
-
1.2
0.8
V
V
IH
-
5
2.4
-
-
2.4
-
-
2.4
-
-
V
IIN
0, 5
5
-
±0.1
±5
-
±0.1
±5
-
±0.1
±5
µA
IDD1
-
0, 5
5
-
4
8
-
4
8
-
4
8
mA
6-162
MWS5114
Static Electrical Specifications
At T
A
= 0
o
C to +70
o
C, V
DD
=
±5%,
Except as Noted
(Continued)
LIMITS
MWS5114-3
V
O
(V)
0, 5
V
IN
(V)
0, 5
V
DD
(V)
5
(NOTE 1)
TYP
±0.5
MWS5114-2
(NOTE 1)
TYP
±0.5
MWS5114-1
(NOTE 1)
TYP
±0.5
CONDITIONS
PARAMETER
Three-State
Output Leakage
Current (Note 4)
Input
Capacitance
Output
Capacitance
NOTES:
SYMBOL
I
OUT
MIN
-
MAX
±5
MIN
-
MAX
±5
MIN
−
MAX
±5
UNITS
µA
CI
N
-
-
-
-
5
7.5
-
5
7.5
-
5
7.5
pF
C
OUT
-
-
-
-
10
15
-
10
15
-
10
15
pF
1. Typical values are for T
A
= 25
o
C and nominal V
DD
.
2. All inputs in parallel.
3. Outputs open circuited; cycle time = 1µs.
4. All outputs in parallel.
6-163
MWS5114
Dynamic Electrical Specifications
at T
A
= 0
o
C to +70
o
C, V
DD
= 5V
±5%,
Input t
R
, t
F
= 10ns; C
L
= 50pF and 1 TTL Load
LIMITS
MWS5114-3
(NOTE 1)
MIN
(NOTE 2)
TYP
MWS5114-2
(NOTE 1)
MIN
(NOTE 2)
TYP
MWS5114-1
(NOTE 1)
MIN
(NOTE 2)
TYP
PARAMETER
SYMBOL
MAX
MAX
MAX
UNITS
READ CYCLE TIMES (FIGURE 1)
Read Cycle
Access from
Address
Chip Selection to
Output Valid
Chip Selection to
Output Active
Output Three-State
from Deselection
Output Hold from
Address Change
tRC
tAA
200
-
160
160
-
200
250
-
200
200
-
250
300
-
250
250
-
300
ns
ns
tCO
-
110
150
-
150
200
-
200
250
ns
tCX
20
100
-
20
100
-
20
100
-
ns
tOTD
-
75
125
-
75
125
-
75
125
ns
tOHA
50
100
-
50
100
-
50
100
-
ns
WRITE CYCLE TIMES (FIGURE 2)
Write Cycle
Write
Write Release
Address to Chip
Select Setup Time
Address to Write
Setup Time
Data to Write
Setup Time
Data Hold from
Write
NOTES:
1. Time required by a limit device to allow for the indicated function.
2. Typical values are for T
A
= 25
o
C and nominal V
DD
.
tWC
tW
tWR
tACS
200
125
50
0
160
100
40
0
-
-
-
-
250
150
50
0
200
120
40
0
-
-
-
-
300
200
50
0
220
140
40
0
-
-
-
-
ns
ns
ns
ns
tAW
25
20
-
50
40
-
50
40
-
ns
tDSU
75
50
-
75
50
-
75
50
-
ns
tDH
30
10
-
30
10
-
30
10
-
ns
6-164
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