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BC636T/R

Description
TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size128KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BC636T/R Overview

TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal

BC636T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-92
package instructionPLASTIC, SC-43A, 3 PIN
Contacts3
Reach Compliance Codecompliant
Maximum collector current (IC)1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)63
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Humidity sensitivity levelNOT APPLICABLE
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)145 MHz
VCEsat-Max0.5 V
BC636; BCP51; BCX51
45 V, 1 A PNP medium power transistors
Rev. 08 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series.
Table 1.
Product overview
Package
NXP
BC636
[2]
BCP51
BCX51
[1]
[2]
Type number
[1]
NPN complement
JEITA
SC-43A
SC-73
SC-62
JEDEC
TO-92
-
TO-243
BC635
BCP54
BCX54
SOT54
SOT223
SOT89
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
I
High current
I
Two current gain selections
I
High power dissipation capability
1.3 Applications
I
I
I
I
Linear voltage regulators
High-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
single pulse; t
p
1 ms
V
CE
=
−2
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−150
mA
Conditions
open base
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
−45
−1
−1.5
250
160
250
Unit
V
A
A

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Description TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-243, PLASTIC, MPT3, SMD, SC-62, UPAK-3, BIP General Purpose Power TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-243, PLASTIC, MPT3, SMD, SC-62, UPAK-3, BIP General Purpose Power TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-243, PLASTIC, MPT3, SMD, SC-62, UPAK-3, BIP General Purpose Power TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Reach Compliance Code compliant unknown unknown unknown unknown unknown
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 45 V 45 V 45 V 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 63 100 63 40 25 100
JESD-30 code O-PBCY-T3 R-PSSO-F3 R-PSSO-F3 R-PSSO-F3 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CYLINDRICAL SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.8 W 1 W 1 W 2 W 1.5 W 1 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO YES YES YES YES YES
Terminal form THROUGH-HOLE FLAT FLAT FLAT GULL WING GULL WING
Terminal location BOTTOM SINGLE SINGLE SINGLE DUAL DUAL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 145 MHz 50 MHz 50 MHz 50 MHz 115 MHz 115 MHz
Maker NXP NXP NXP NXP - NXP
Parts packaging code TO-92 SOT-89 SOT-89 SOT-89 - -
package instruction PLASTIC, SC-43A, 3 PIN SMALL OUTLINE, R-PSSO-F3 PLASTIC, MPT3, SMD, SC-62, UPAK-3 PLASTIC, MPT3, SMD, SC-62, UPAK-3 - SMALL OUTLINE, R-PDSO-G4
Contacts 3 3 3 3 - -
JEDEC-95 code TO-92 TO-243 TO-243 TO-243 - -
JESD-609 code e3 e3 e3 e3 - -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - -
Terminal surface TIN Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) - -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - -
transistor applications SWITCHING AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER -
ECCN code - EAR99 EAR99 EAR99 - EAR99
Shell connection - COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Base Number Matches - 1 1 1 1 -
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