BCP51-16T/R datasheet, PDF - EEWORLD Datasheet

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BCP51-16T/R: DescriptionTRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size128KB，15 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BCP51-16T/R Overview

TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

BCP51-16T/R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	115 MHz

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BC636; BCP51; BCX51

45 V, 1 A PNP medium power transistors

Rev. 08 — 22 February 2008

Product data sheet

1. Product proﬁle

1.1 General description

PNP medium power transistor series.

Table 1.

Product overview

Package

NXP

BC636

[2]

BCP51

BCX51

[1]

[2]

Type number

[1]

NPN complement

JEITA

SC-43A

SC-73

SC-62

JEDEC

TO-92

TO-243

BC635

BCP54

BCX54

SOT54

SOT223

SOT89

Valid for all available selection groups.

Also available in SOT54A and SOT54 variant packages (see

Section 2).

1.2 Features

High current

Two current gain selections

High power dissipation capability

1.3 Applications

Linear voltage regulators

High-side switches

MOSFET drivers

Ampliﬁers

1.4 Quick reference data

Table 2.

Symbol

CEO

Quick reference data

Parameter

collector-emitter voltage

collector current

peak collector current

DC current gain

selection -10

selection -16

single pulse; t

≤

1 ms

−2

−150

−2

−150

−2

−150

Conditions

open base

Min

100

Typ

Max

−45

−1

−1.5

250

160

250

Unit

BCP51-16T/R Related Products

	BCP51-16T/R	BCX51-16T/R	BCX51-10T/R	BCX51T/R	BCP51T/R	BC636T/R
Description	TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-243, PLASTIC, MPT3, SMD, SC-62, UPAK-3, BIP General Purpose Power	TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-243, PLASTIC, MPT3, SMD, SC-62, UPAK-3, BIP General Purpose Power	TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, TO-243, PLASTIC, MPT3, SMD, SC-62, UPAK-3, BIP General Purpose Power	TRANSISTOR 1 A, 45 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power	TRANSISTOR 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	compliant
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	45 V	45 V	45 V	45 V	45 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100	63	40	25	63
JESD-30 code	R-PDSO-G4	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PDSO-G4	O-PBCY-T3
Number of components	1	1	1	1	1	1
Number of terminals	4	3	3	3	4	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	ROUND
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	1 W	1 W	1 W	2 W	1.5 W	0.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	NO
Terminal form	GULL WING	FLAT	FLAT	FLAT	GULL WING	THROUGH-HOLE
Terminal location	DUAL	SINGLE	SINGLE	SINGLE	DUAL	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	115 MHz	50 MHz	50 MHz	50 MHz	115 MHz	145 MHz
Maker	NXP	NXP	NXP	NXP	-	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PSSO-F3	PLASTIC, MPT3, SMD, SC-62, UPAK-3	PLASTIC, MPT3, SMD, SC-62, UPAK-3	-	PLASTIC, SC-43A, 3 PIN
ECCN code	EAR99	EAR99	EAR99	EAR99	-	-
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	-
Parts packaging code	-	SOT-89	SOT-89	SOT-89	-	TO-92
Contacts	-	3	3	3	-	3
JEDEC-95 code	-	TO-243	TO-243	TO-243	-	TO-92
JESD-609 code	-	e3	e3	e3	-	e3
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Terminal surface	-	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	-	TIN
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
transistor applications	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	SWITCHING
Base Number Matches	-	1	1	1	1	-

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