KM41V4000BP-10 datasheet, PDF - EEWORLD Datasheet

KM41V4000BP-10: DescriptionFast Page DRAM, 4MX1, 100ns, CMOS, PDIP18, PLASTIC, DIP-18; Categorystorage storage; File Size649KB，19 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM41V4000BP-10 Overview

Fast Page DRAM, 4MX1, 100ns, CMOS, PDIP18, PLASTIC, DIP-18

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	DIP
package instruction	DIP, DIP18,.3
Contacts	18
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	100 ns
Other features	RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH
I/O type	SEPARATE
JESD-30 code	R-PDIP-T18
JESD-609 code	e0
length	22.02 mm
memory density	4194304 bit
Memory IC Type	FAST PAGE DRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	18
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	1024
Maximum seat height	4.65 mm
self refresh	NO
Maximum standby current	0.001 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm

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