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EDJ4204EASE-AE-F

Description
DDR DRAM, 1GX4, 0.3ns, CMOS, PBGA78,
Categorystorage    storage   
File Size2MB,146 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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EDJ4204EASE-AE-F Overview

DDR DRAM, 1GX4, 0.3ns, CMOS, PBGA78,

EDJ4204EASE-AE-F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
package instructionFBGA, BGA78,9X13,32
Reach Compliance Codecompliant
Maximum access time0.3 ns
Maximum clock frequency (fCLK)533 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B78
memory density4294967296 bit
Memory IC TypeDDR DRAM
memory width4
Number of terminals78
word count1073741824 words
character code1000000000
Maximum operating temperature85 °C
Minimum operating temperature
organize1GX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA78,9X13,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply1.35 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length4,8
Maximum standby current0.02 A
Maximum slew rate0.32 mA
Nominal supply voltage (Vsup)1.35 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
DATA SHEET
4G bits DDR3L SDRAM
EDJ4204EASE (1024M words
×
4 bits)
EDJ4208EASE (512M words
×
8 bits)
Specifications
Density: 4G bits
Organization
128M words
×
4 bits
×
8 banks (EDJ4204EASE)
64M words
×
8 bits
×
8 banks (EDJ4208EASE)
Package
78-ball FBGA
Lead-free (RoHS compliant) and Halogen-free
Power supply: 1.35V (typ.)
VDD, VDDQ
=
1.283V to 1.45V
Backward compatible for VDD, VDDQ
=
1.5V
±
0.075V
Data rate
1333Mbps/1066Mbps (max.)
1KB page size
Row address: A0 to A15
Column address: A0 to A9, A11 (EDJ4204EASE)
A0 to A9 (EDJ4208EASE)
Eight internal banks for concurrent operation
Burst lengths (BL): 8 and 4 with Burst Chop (BC)
Burst type (BT):
Sequential (8, 4 with BC)
Interleave (8, 4 with BC)
/CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11
/CAS Write Latency (CWL): 5, 6, 7, 8
Precharge: auto precharge option for each burst
access
Driver strength: RZQ/7, RZQ/6 (RZQ = 240Ω)
Refresh: auto-refresh, self-refresh
Refresh cycles
Average refresh period
7.8µs at 0°C
TC
≤ +85°C
3.9µs at
+85°C <
TC
≤ +95°C
Operating case temperature range
TC = 0°C to +95°C
Features
Double-data-rate architecture: two data transfers per
clock cycle
The high-speed data transfer is realized by the 8 bits
prefetch pipelined architecture
Bi-directional differential data strobe (DQS and /DQS)
is transmitted/received with data for capturing data at
the receiver
DQS is edge-aligned with data for READs; center-
aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK
transitions
Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
Data mask (DM) for write data
Posted /CAS by programmable additive latency for
better command and data bus efficiency
On-Die Termination (ODT) for better signal quality
Synchronous ODT
Dynamic ODT
Asynchronous ODT
Multi Purpose Register (MPR) for pre-defined pattern
read out
ZQ calibration for DQ drive and ODT
Programmable Partial Array Self-Refresh (PASR)
/RESET pin for Power-up sequence and reset
function
SRT range:
Normal/extended
Programmable Output driver impedance control
Document No. E1727E41 (Ver. 4.1)
Date Published September 2011 (K) Japan
Printed in Japan
URL: http://www.elpida.com
Elpida
Memory, Inc. 2010-2011

EDJ4204EASE-AE-F Related Products

EDJ4204EASE-AE-F EDJ4208EASE-DJ-F
Description DDR DRAM, 1GX4, 0.3ns, CMOS, PBGA78, DDR DRAM, 512MX8, 0.255ns, CMOS, PBGA78,
Is it Rohs certified? conform to conform to
Maker Micron Technology Micron Technology
package instruction FBGA, BGA78,9X13,32 FBGA, BGA78,9X13,32
Reach Compliance Code compliant compli
Maximum access time 0.3 ns 0.255 ns
Maximum clock frequency (fCLK) 533 MHz 667 MHz
I/O type COMMON COMMON
interleaved burst length 4,8 4,8
JESD-30 code R-PBGA-B78 R-PBGA-B78
memory density 4294967296 bit 4294967296 bi
Memory IC Type DDR DRAM DDR DRAM
memory width 4 8
Number of terminals 78 78
word count 1073741824 words 536870912 words
character code 1000000000 512000000
Maximum operating temperature 85 °C 85 °C
organize 1GX4 512MX8
Output characteristics 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code FBGA FBGA
Encapsulate equivalent code BGA78,9X13,32 BGA78,9X13,32
Package shape RECTANGULAR RECTANGULAR
Package form GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH
power supply 1.35 V 1.35 V
Certification status Not Qualified Not Qualified
refresh cycle 8192 8192
Continuous burst length 4,8 4,8
Maximum standby current 0.02 A 0.02 A
Maximum slew rate 0.32 mA 0.325 mA
Nominal supply voltage (Vsup) 1.35 V 1.35 V
surface mount YES YES
technology CMOS CMOS
Temperature level OTHER OTHER
Terminal form BALL BALL
Terminal pitch 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM
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