BSS123
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
100V
R
DS(ON)
6.0Ω @ V
GS
= 10V
I
D
T
A
= +25°C
0.17
Features and Benefits
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
High Drain-Source Voltage Rating
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
Description
These N-Channel enhancement mode field effect transistors are
produced using DIODES proprietary, high density, uses advanced
trench technology.These products have been designed to minimize
on-state resistance while provide rugged, reliable, and fast switching
performance.These products are particularly suited for low voltage,
low current applications such as:
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Applications
Small Servo Motor Control
Power MOSFET Gate Drivers
Switching Applications
Drain
SOT23
D
Gate
G
Source
S
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
BSS123-7-F
BSS123Q-13
BSS123Q-7
Notes:
Qualification
Commercial
Automotive
Automotive
Case
SOT23
SOT23
SOT23
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K23 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or
Y
= Year (ex: A = 2013)
M = Month (ex: 9 = September)
K23
K23
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
2006
T
Jan
1
2007
U
Feb
2
Shanghai A/T Site
2008
V
Mar
3
2009
W
Apr
4
2010
X
May
5
2011
Y
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
August 2013
© Diodes Incorporated
YM
YM
BSS123
Document number: DS30366 Rev. 18 - 2
1 of 5
www.diodes.com
BSS123
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
100
±20
170
680
Unit
V
V
mA
ADVANCE INFORMATION
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
,
T
STG
Max
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage , Forward
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSSF
V
GS(th)
R
DS (ON)
g
FS
V
SD
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Min
100
—
—
—
0.8
—
—
80
-
—
—
—
—
—
—
—
Typ
—
—
—
—
1.4
—
—
370
0.84
29
10
2
—
—
—
—
Max
—
0.1
10
50
2.0
6.0
10
—
1.3
60
15
6
8
8
13
16
Unit
V
µA
nA
nA
V
Ω
mS
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 0.17A
V
GS
= 4.5V, I
D
= 0.17A
V
DS
=10V, I
D
= 0.17A, f = 1.0KHz
V
GS
= 0V, I
S
= 0.34A,
pF
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
ns
ns
ns
ns
V
GS
= 10V, V
DD
= 30V,
I
D
= 0.28A, R
GEN
= 50Ω
5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
BSS123
Document number: DS30366 Rev. 18 - 2
2 of 5
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August 2013
© Diodes Incorporated
BSS123
0.7
2.4
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
1
5
I
D
, DRAIN-SOURCE CURRENT (A)
0.6
0.5
0.4
0.3
0.2
2.0
ADVANCE INFORMATION
1.6
1.2
0.1
0
0
0.8
0.1
0.3
0.4
0.5
0.6
0.2
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 2 On-Resistance Variation with Gate Voltage
and Drain-Source Current
V
GS(th),
NORMALIZED THRESHOLD VOLTAGE
1.2
R
DS(ON),
NORMALIZED ON-RESISTANCE
V
DS
= V
GS
I
D
= 250µA
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
25
75 100 125 150
50
0
T
J
, JUNCTION TEMPERATURE (ºC)
Fig. 4 On-Resistance Variation with Temperature
V
GS
= 10V
I
D
= 170m
1.1
1
0.9
0.8
0.7
-50
25
50
0
-25
75 100 125 150
T
J
, JUNCTION TEMPERATURE (ºC)
Fig. 3 Gate Threshold Variation with Temperature
50
40
C, CAPACITANCE (pF)
30
20
C
iss
10
C
oss
C
rss
0
0
20
10
5
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 5 Typical Capacitance
25
BSS123
Document number: DS30366 Rev. 18 - 2
3 of 5
www.diodes.com
August 2013
© Diodes Incorporated
BSS123
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
ADVANCE INFORMATION
B C
H
K
D
J
F
G
L
M
K1
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
X
E
BSS123
Document number: DS30366 Rev. 18 - 2
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August 2013
© Diodes Incorporated
BSS123
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
ADVANCE INFORMATION
BSS123
Document number: DS30366 Rev. 18 - 2
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August 2013
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