BC489BRLRE datasheet, PDF - EEWORLD Datasheet

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BC489BRLRE: Description500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size190KB，5 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BC489BRLRE Overview

500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN

BC489BRLRE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	TO-92
package instruction	CASE 29-04, TO-226AA, 3 PIN
Contacts	3
Manufacturer packaging code	CASE 29-04
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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ON Semiconductort

High Current Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

Symbol

CEO

CBO

EBO

, T

stg

Value

5.0

0.5

625

5.0

1.5

–55 to +150

Unit

Vdc

Adc

BC489, A, B

mW/°C

Watt

mW/°C

°C

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Symbol

qJA

qJC

Max

200

83.3

Unit

°C/W

BASE

COLLECTOR

EMITTER

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

= 10 mAdc, I

= 0)

Collector–Base Breakdown Voltage

= 100

mAdc,

= 0)

Emitter–Base Breakdown Voltage

= 10

mAdc,

= 0)

Collector Cutoff Current

= 60 Vdc, I

= 0)

(BR)CEO

(BR)CBO

(BR)EBO

CBO

5.0

—

100

Vdc

nAdc

ON CHARACTERISTICS*

DC Current Gain

= 10 mAdc, V

= 2.0 Vdc)

= 100 mAdc, V

= 2.0 Vdc)

BC489

BC489A

BC489B

100

160

—

160

260

—

400

250

400

—

= 1.0 Adc, V

= 5.0 Vdc)*

1. Pulse Test: Pulse Width = 300

ms,

Duty Cycle 2%.

Semiconductor Components Industries, LLC, 2001

227

March, 2001 – Rev. 1

Publication Order Number:

BC489/D

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