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BCX53-16LEADFREE

Description
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size71KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
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BCX53-16LEADFREE Overview

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BCX53-16LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCentral Semiconductor
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
BCX51
BCX52
BCX53
SURFACE MOUNT
PNP SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX51,
BCX52, and BCX53 types are PNP Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.
MARKING CODE: PLEASE SEE MARKING
CODE TABLE ON FOLLOWING PAGE
BCX51
45
45
BCX52
60
60
5.0
1.0
1.5
100
200
1.2
-65 to +150
104
BCX53
100
80
UNITS
V
V
V
A
A
mA
mA
W
°C
°C/W
SOT-89 CASE
MAXIMUM RATINGS
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Peak Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ,Tstg
Θ
JA
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=30V
ICBO
VCB=30V, TA=125°C
IEBO
VEB=5.0V
BVCBO
IC=100µA (BCX51)
45
BVCBO
IC=100µA (BCX52)
60
BVCBO
IC=100µA (BCX53)
100
BVCEO
IC=10mA (BCX51)
45
BVCEO
IC=10mA (BCX52)
60
BVCEO
IC=10mA (BCX53)
80
VCE(SAT)
IC=500mA, IB=50mA
VBE(ON)
VCE=2.0V, IB=500mA
hFE
VCE=2.0V, IC=5.0mA
63
hFE
VCE=2.0V, IC=150mA
63
hFE
VCE=2.0V, IC=150mA
(BCX51-10, BCX52-10, BCX53-10)
63
hFE
VCE=2.0V, IC=150mA
(BCX51-16, BCX52-16, BCX53-16)
100
hFE
VCE=2.0V, IC=500mA
40
fT
VCE=5.0V, IC=10mA, f=100MHz
TYP
MAX
100
10
100
0.5
1.0
250
160
250
50
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
MHz
R3 (20-May 2004)

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