BFY90.MODG4 datasheet, PDF - EEWORLD Datasheet

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BFY90.MODG4: DescriptionRF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, TO-72, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size18KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BFY90.MODG4 Overview

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, TO-72, 4 PIN

BFY90.MODG4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.025 A
Collector-based maximum capacity	1.5 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
JESD-609 code	e4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	GOLD
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1000 MHz

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BFY90

MECHANICAL DATA

Dimensions in mm (inches)

4.95 (0.195)

4.52 (0.178)

4.95 (0.195)

4.52 (0.178)

SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

5.33 (0.210)

4.32 (0.170)

0.48 (0.019)

0.41 (0.016)

dia.

12.7 (0.500)

min.

DESCRIPTION

The BFY90 is a low noise transistor intended for

use in broad and narrow-band amplifiers up to

1GHz.

2.54 (0.100)

Nom.

TO72

Pin 1 – Emitter

Pin 2 –Base

Pin 3 – Collector

Pin 4 – Connected to Case

ABSOLUTE MAXIMUM RATINGS

CBO

CER

CEO

EBO

C(AV)

tot

stg,

Collector – Base Voltage

(TA= 25°C unless otherwise stated)

30V

15V

2.5v

25mA

50mA

200mW°C

200°C

–65 to +200°C

Collector – Emitter Voltage (R

)

Collector – Emitter Voltage

Emitter – Base Voltage

Average Collector Current

Peak Collector Current (f

1MHz)

Power Dissipation at T

amb

25°C

Storage Temperature

Junction Temperature

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

Prelim. 12/99

BFY90.MODG4 Related Products

	BFY90.MODG4	BFY90	BFY90-QR-BE1	BFY90E1	BFY90-QR-A	BFY90-QR-B
Description	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, TO-72, 4 PIN	silicon planar epitaxial npn transistor	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, TO-72, 4 PIN	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, TO-72, 4 PIN	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, TO-72, 4 PIN	RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, TO-72, 4 PIN
Is it Rohs certified?	conform to	incompatible	conform to	conform to	incompatible	incompatible
package instruction	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.025 A	0.025 A	0.025 A	0.025 A	0.025 A	0.025 A
Collector-based maximum capacity	1.5 pF	1.5 pF	1.5 pF	1.5 pF	1.5 pF	1.5 pF
Collector-emitter maximum voltage	15 V	15 V	15 V	15 V	15 V	15 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-72	TO-72	TO-72	TO-72	TO-72	TO-72
JESD-30 code	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4
Number of components	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	1000 MHz	1000 MHz	1000 MHz	1000 MHz	1000 MHz	1000 MHz
Maker	TT Electronics plc	TT Electronics plc	TT Electronics plc	TT Electronics plc	-	TT Electronics plc
Base Number Matches	-	1	1	1	1	-

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