BUX51R1 datasheet, PDF - EEWORLD Datasheet

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BUX51R1: DescriptionPower Bipolar Transistor, 3.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size18KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BUX51R1 Overview

Power Bipolar Transistor, 3.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 PIN

BUX51R1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	TO-39, 3 PIN
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	3.5 A
Collector-emitter maximum voltage	200 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	8 MHz

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BUX51

MECHANICAL DATA

Dimensions in mm(inches)

8.89 (0.35)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

NPN SILICON

TRANSISTOR

4.19 (0.165)

4.95 (0.195)

12.70

(0.500)

min.

0.89 max.

(0.035)

7.75 (0.305)

8.51 (0.335)

dia.

FEATURES

5.08 (0.200)

typ.

• FAST SWITCHING

• HIGH PULSE POWER

2.54

(0.100)

2

1

0.66 (0.026)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

3

45˚

APPLICATIONS

• POWER SWITCHING CIRCUITS

Pin 3 = Collector

• MOTOR CONTROL

TO39

Pin 1 = Emitter

Pin 2 = Base

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

V

CBO

V

CEX

V

CEO

V

ER

V

EBO

I

C

I

CM

I

B

P

tot

T

stg,

T

j

Collector – Base Voltage

Collector – Emitter Voltage (V

BE

= -1.5V)

Collector – Emitter Voltage

Collctor – Emitter Voltage R

BE

= 100

W

Emitter – Base Voltage

Collector Current

Peak Collector Current (t

p

= 10 ms)

Base Current

Total Power Dissipation at T

case

£

25°C

Storage Temperature

Junction Temperature

300V

200V

260V

7V

3.5A

5A

0.7A

10W

200°C

-65°C to +200°C

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Prelim.10/99

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