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BUX54.MODR1

Description
Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size17KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BUX54.MODR1 Overview

Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN

BUX54.MODR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionTO-39, 3 PIN
Reach Compliance Codecompliant
Maximum collector current (IC)2 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
BUX54
MECHANICAL DATA
Dimensions in mm(inches)
8.51 (0.34)
9.40 (0.37)
NPN SILICON
TRANSISTOR
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
FEATURES
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
• FAST SWITCHING
• HIGH PULSE POWER
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
APPLICATIONS
• POWER SWITCHING CIRCUITS
• MOTOR CONTROL
45°
TO39 (TO-205AD)
Pin 1 = Emitter
Pin 2 = Base
Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j,
T
stg
Collector – Base Voltage
Collector – Emitter Voltage (V
BE
= -1.5V)
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Peak Collector Current (t
p
= 10 ms)
Base Current
Total Power Dissipation at T
case
25°C
Maximum Junction And Storage Temperature Range
450V
450V
400V
7V
2A
5A
0.375A
10W
-65°C to +200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5725
Issue 1

BUX54.MODR1 Related Products

BUX54.MODR1 BUX54R1 BUX54-QR-BR1 BUX54-QR-B BUX54.MOD
Description Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN
Is it Rohs certified? conform to conform to conform to incompatible incompatible
Maker TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc
package instruction TO-39, 3 PIN TO-39, 3 PIN TO-39, 3 PIN TO-39, 3 PIN TO-39, 3 PIN
Reach Compliance Code compliant compliant compliant compliant compliant
Maximum collector current (IC) 2 A 2 A 2 A 2 A 2 A
Collector-emitter maximum voltage 400 V 400 V 400 V 400 V 400 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20 20 20
JEDEC-95 code TO-205AD TO-205AD TO-205AD TO-205AD TO-205AD
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C
Package body material METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 8 MHz 8 MHz 8 MHz 8 MHz 8 MHz
JESD-609 code e1 e1 e1 - -
Terminal surface TIN SILVER COPPER TIN SILVER COPPER TIN SILVER COPPER - -
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