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MT47H64M8BT-3L:A

Description
DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA92, 11 X 19 MM, ROHS COMPLIANT, FBGA-92
Categorystorage    storage   
File Size7MB,136 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT47H64M8BT-3L:A Overview

DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA92, 11 X 19 MM, ROHS COMPLIANT, FBGA-92

MT47H64M8BT-3L:A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionTFBGA, BGA92,9X21,32
Contacts92
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.45 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)333 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B92
JESD-609 codee1
length19 mm
memory density536870912 bit
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals92
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize64MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA92,9X21,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.005 A
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width11 mm
512Mb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H128M4 – 32 Meg x 4 x 4 banks
MT47H64M8 – 16 Meg x 8 x 4 banks
MT47H32M16 – 8 Meg x 16 x 4 banks
For the latest data sheet, refer to Micron’s Web site:
http://www.micron.com/ddr2
Features
RoHS compliant
V
DD
= +1.8V ±0.1V, V
DD
Q = +1.8V ±0.1V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
4 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Programmable burst lengths: 4 or 8
Adjustable data-output drive strength
64ms, 8,192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
Supports JEDEC clock jitter specification
Table 1:
Architecture
Configuration Addressing
128 Meg x 4 64 Meg x 8 32 Meg x 16
16 Meg x 8
x 4 banks
8K
16K (A0–A13)
4 (BA0–BA1)
1K (A0–A9)
8 Meg x 16
x 4 banks
8K
8K (A0–A12)
4 (BA0–BA1)
1K (A0–A9)
Options
• Configuration
128 Meg x 4 (32 Meg x 4 x 4 banks)
64 Meg x 8 (16 Meg x 8 x 4 banks)
32 Meg x 16 (8 Meg x 16 x 4 banks)
• FBGA package (lead-free)
92-ball FBGA (11mm x 19mm) (:A)
84-ball FBGA (12mm x 12.5mm) (:B)
60-ball FBGA (12mm x 10mm) (:B)
• Timing – cycle time
5.0ns @ CL = 3 (DDR2-400)
3.75ns @ CL = 4 (DDR2-533)
3.0ns @ CL = 5 (DDR2-667)
3.0ns @ CL = 4 (DDR2-667)
2.5ns @ CL = 6 (DDR2-800)
2.5ns @ CL = 5 (DDR2-800)
• Self Refresh
Standard
Low-Power
• Operating temperature
Commercial (0°C
T
C
85°C)
Industrial (-40°C
T
C
95°C; -40°C
T
A
85°C)
• Revision
pdf: 09005aef8117c18e, source: 09005aef8117c192
512MbDDR2_1.fm - Rev. J 12/05 EN
Marking
128M4
64M8
32M16
BT
CC
CB
-5E
-37E
-3
-3E
-25
-25E
None
L
None
IT
:A/:B
1
Configuration 32 Meg x 4 x
4 banks
8K
Refresh Count
16K (A0–A13)
Row Addr.
4 (BA0–BA1)
Bank Addr.
Column Addr. 2K (A0–A9, A11)
Table 2:
Key Timing Parameters
RC
(ns)
55
55
55
54
55
55
t
Data Rate (MHz)
t
Speed
RCD
t
RP
Grade CL = 3 CL = 4 CL = 5 CL = 6 (ns) (ns)
-5E
-37E
-3
-3E
-25
-25E
400
400
400
N/A
N/A
N/A
400
533
533
667
NA
533
N/A
N/A
667
667
667
800
N/A
N/A
N/A
N/A
800
N/A
15
15
15
12
15
12.5
15
15
15
12
13
12.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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