BAV99
BAV99
Connection Diagram
3
3
3
A7
2
1
1
2
1
2
SOT-23
Small Signal Diode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
70
200
1.0
2.0
-55 to +150
150
Units
V
mA
A
A
°C
°C
T
stg
T
J
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
350
357
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
Test Conditions
I
R
= 100
µA
I
F
= 1.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
R
= 70 V
V
R
= 25 V, T
A
= 150°C
V
R
= 70 V, T
A
= 150°C
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100Ω
Min
70
Max
715
855
1.0
1.25
2.5
30
50
1.5
6.0
Units
V
mV
mV
V
V
µA
µA
µA
pF
ns
I
R
Reverse Current
C
T
t
rr
Total Capacitance
Reverse Recovery Time
2001
Fairchild Semiconductor Corporation
BAV99, Rev. B
BAV99
Small Signal Diode
(continued)
Typical Characteristics
150
Ta= 25
°
C
300
Ta= 25
°
C
Reverse Voltage, V
R
[V]
Reverse Current, I
R
[nA]
1
2
3
5
10
20
30
50
100
140
250
200
130
150
120
100
50
110
0
Reverse Current, I
R
[uA]
10
20
30
50
70
100
Reverse Voltage, V
R
[V]
Figure 1. Reverse Voltage vs Reverse Current
BV - 1.0 to 100uA
Figure 2. Reverse Current vs Reverse Voltage
IR - 10 to 100 V
Ta= 25
°
C
700
450
Ta= 25
°
C
Forward Voltage, V
F
[mV]
Forward Voltage, V
F
[mV]
650
400
600
350
550
300
500
250
450
1
2
3
5
10
20
30
50
100
0.1
0.2
0.3
0.5
1
2
3
5
10
Forward Current, I
F
[uA]
Forward Current, I
F
[mA]
Figure 3. Forward Voltage vs Forward Current
VF - 1.0 to 100 uA
Figure 4. Forward Voltage vs Forward Current
VF - 0.1 to 10 mA
1.3
Ta= 25
°
C
Ta= 25
°
C
Forward Voltage, V
F
[V]
Total Capacitance [pF]
10
20
30
50
100
200
300
500
1.4
1.2
1.2
1.0
1.1
0.8
0.6
1.0
0
2
4
6
8
10
12
14
Forw ard C urrent, I
F
[m A ]
R everse V oltage [V ]
Figure 5. Forward Voltage vs Forward Current
VF - 10 - 800 mA
Figure 6. Total Capacitance vs Reverse Voltage
BAV99, Rev. B
BAV99
Small Signal Diode
(continued)
Typical Characteristics
(continued)
4.0
400
Ta= 25
°
C
Reverse Recovery Time [nS]
3.5
300
3.0
Current [mA]
2.5
200
I
F
(A V
)
-A
VE
RA
GE
2.0
RE
CT
100
IF IE
DC
UR
R
1.5
0
EN
T-
mA
150
1.0
10
20
30
40
50
60
0
50
100
o
Reverse Current [mA]
Ambient Temperature, T
A
[ C]
Figure 7. Reverse Recovery Time
vs Reverse Current
TRR - IR 10 mA vs 60 mA
Figure 8. Average Rectified Current (I
F(AV)
)
versus Ambient Temperature (T
A
)
500
Power Dissipation, P [mW ]
D
400
DO -35 P kg
300
SO T-23 P kg
200
100
0
0
50
100
150
o
200
Average Tem perature, I
O
[ C ]
Figure 9. Power Derating Curve
BAV99, Rev. B
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Rev. H4
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