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5KP10CA

Description
5000 W, BIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size679KB,6 Pages
ManufacturerUN semiconductor
Websitehttp://www.unsemi.com.tw/
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5KP10CA Overview

5000 W, BIDIRECTIONAL, SILICON, TVS DIODE

Axial Lead Transient Voltage Suppressors (TVS)
5KP Series
Description
The 5KP series is designed specifically to protect sensitive electronic
equipment from voltage transients induced by lightning and other transient
voltage events.
5.0 To 190 V
5000W
Uni-directional
Bi-directional
Features
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
Glass passivated chip junction in P600 Package
Low leakage
Uni and Bidirectional unit
Excellent clamping capability
5000W Peak power capability at 10
×
1000µs waveform Repetition
rate (duty cycle):0.01%
Fast response time: typically less than 1.0ps from 0 Volts to V
BR
min
Typical I
R
less than 5μA above 12V.
High Temperature soldering: 260°C/40 seconds at terminals
Typical maximum temperature coefficient
ΔV
BR
= 0.1%
×
V
BR
@25°C×
ΔT
Plastic package has Underwriters Laboratory Flammability 94V-0
Matte tin lead–free Plated
Halogen free and RoHS compliant
Typical failure mode is short from over-specified voltage or current
Whisker test is conducted based on JEDEC JESD201A per its table
4a and 4c
IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)
ESD protection of data lines in accordance with IEC 61000-4-2
(IEC801-2)
EFT protection of data lines in accordance with IEC 61000-4-4
(IEC801-4)
Functional Diagram
Bi-directional
Cathode
Uni-direction
Anode
Applications
TVS devices are ideal for the protection of I/O interfaces, V
CC
bus and other
vulnerable circuits used in Telecom, Computer, Industrial and Consumer
electronic applications.
Maximum Ratings (T
A
=25℃ unless otherwise noted)
Parameter
Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note
1), (Note 2)
Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)
Power Dissipation on Infinite Heat Sink at T
L
=75°C
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only
(Note 4)
Operating junction and Storage Temperature Range.
Symbol
P
PPM
I
PP
P
M(AV)
I
FSM
V
F
T
J
, T
STG
Value
5000
See Next Table
8.0
500
3.5/5.0
-55 to +150
Unit
Watts
Amps
Watt
Amps
Voltage
°C
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2.
2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.
4. V
F
< 3.5V for V
BR
< 200V and V
F
< 6.5V for V
BR
> 201V.
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
1/6
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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