PD - 97046A
Features
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IRF3805PbF
IRF3805SPbF
IRF3805LPbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 55V
R
DS(on)
= 3.3mΩ
Description
G
S
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
I
D
= 75A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
TO-220AB
IRF3805PbF
D
2
Pak
IRF3805SPbF
Max.
210
150
75
890
300
2.0
± 20
TO-262
IRF3805LPbF
Units
A
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
W
W/°C
V
mJ
A
mJ
d
Single Pulse Avalanche Energy Tested Value
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Ã
h
650
940
See Fig.12a, 12b, 15, 16
-55 to + 175
g
i
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
y
y
k
Parameter
Typ.
Max.
0.5
–––
62
40
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
ik
i
–––
0.50
–––
–––
l
Units
°C/W
Junction-to-Ambient (PCB Mount)
jk
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1
07/23/10
IRF3805/S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
2.0
75
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.051
2.6
–––
–––
–––
–––
–––
–––
190
52
72
150
20
93
87
4.5
7.5
7960
1260
630
4400
980
1550
–––
–––
3.3
4.0
–––
20
250
200
-200
290
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
mΩ
V
V
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 75A
V
DS
= 25V, I
D
= 75A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 75A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 75A
R
G
= 2.6
Ω
V
GS
= 10V
V/°C Reference to 25°C, I
D
= 1mA
V
DS
= V
GS
, I
D
= 250µA
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
G
D
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
36
47
75
A
890
1.3
54
71
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 28V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF3805/S/LPbF
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
10
4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
10
0.1
4.5V
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
200
TJ = 175°C
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
TJ = 25°C
160
TJ = 175°C
100.0
120
10.0
TJ = 25°C
1.0
80
VDS = 20V
≤
60µs PULSE WIDTH
0.1
4.0
5.0
6.0
7.0
8.0
40
VDS = 10V
380µs PULSE WIDTH
0
0
20
40
60
80 100 120 140 160 180
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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3
IRF3805/S/LPbF
14000
12000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
16
VDS = 44V
VDS= 28V
C, Capacitance (pF)
10000
8000
6000
4000
2000
0
1
Ciss
12
8
Coss
Crss
10
100
4
0
0
50
100
150
200
250
300
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
ISD , Reverse Drain Current (A)
TJ = 175°C
100.0
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
10msec
10
1msec
10.0
TJ = 25°C
1.0
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
100
1000
0.1
VDS , Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF3805/S/LPbF
LIMITED BY PACKAGE
200
ID , Drain Current (A)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
240
2.0
ID = 75A
VGS = 10V
160
120
80
40
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
1.5
1.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
1
D = 0.50
Thermal Response ( ZthJC )
0.1
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
τ
C
τ
1
τ
2
τ
0.01
τ
J
Ri (°C/W)
τi
(sec)
0.2653 0.001016
0.2347 0.012816
0.001
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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