EEWORLDEEWORLDEEWORLD

Part Number

Search

IRF3805LPBF

Description
75 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size388KB,12 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

IRF3805LPBF Online Shopping

Suppliers Part Number Price MOQ In stock  
IRF3805LPBF - - View Buy Now

IRF3805LPBF Overview

75 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF3805LPBF Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage55 V
Processing package descriptionLEAD FREE, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin OVER Nickel
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current75 A
Rated avalanche energy940 mJ
Maximum drain on-resistance0.0033 ohm
Maximum leakage current pulse890 A
PD - 97046A
Features
l
l
l
l
l
l
IRF3805PbF
IRF3805SPbF
IRF3805LPbF
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 55V
R
DS(on)
= 3.3mΩ
Description
G
S
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
I
D
= 75A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
TO-220AB
IRF3805PbF
D
2
Pak
IRF3805SPbF
Max.
210
150
75
890
300
2.0
± 20
TO-262
IRF3805LPbF
Units
A
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Package limited)
Pulsed Drain Current
™
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
W
W/°C
V
mJ
A
mJ
d
Single Pulse Avalanche Energy Tested Value
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Ù
h
650
940
See Fig.12a, 12b, 15, 16
-55 to + 175
g
i
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
y
y
k
Parameter
Typ.
Max.
0.5
–––
62
40
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
ik
i
–––
0.50
–––
–––
l
Units
°C/W
Junction-to-Ambient (PCB Mount)
jk
www.irf.com
1
07/23/10

IRF3805LPBF Related Products

IRF3805LPBF IRF3805PBF IRF3805SLPBF IRF3805SPBF
Description 75 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 75 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 75 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 75 A, 55 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Number of terminals 3 3 3 2
Minimum breakdown voltage 55 V 55 V 55 V 55 V
Processing package description LEAD FREE, PLASTIC PACKAGE-3 LEAD FREE, PLASTIC PACKAGE-3 LEAD FREE, PLASTIC PACKAGE-3 Lead FREE, plastic, D2PAK-3
Lead-free Yes Yes Yes Yes
EU RoHS regulations Yes Yes Yes Yes
state ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle Rectangle Rectangle
Package Size Flange mounting Flange mounting Flange mounting SMALL OUTLINE
Terminal form THROUGH-hole THROUGH-hole THROUGH-hole GULL WING
terminal coating MATTE Tin OVER Nickel MATTE Tin OVER Nickel MATTE Tin OVER Nickel MATTE Tin OVER Nickel
Terminal location single single single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode Single WITH BUILT-IN diode
Shell connection DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1
transistor applications switch switch switch switch
Transistor component materials silicon silicon silicon silicon
Channel type N channel N channel N channel N channel
field effect transistor technology Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR Metal-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type universal power supply universal power supply universal power supply universal power supply
Maximum leakage current 75 A 75 A 75 A 75 A
Rated avalanche energy 940 mJ 940 mJ 940 mJ 940 mJ
Maximum drain on-resistance 0.0033 ohm 0.0033 ohm 0.0033 ohm 0.0033 ohm
Maximum leakage current pulse 890 A 890 A 890 A 890 A
The FPGA learning development board has arrived, let me share it with you briefly
[align=left] After waiting for a long time, I finally got a text message from Yunda Express: the package has arrived. After class, I drove more than 100 kilometers to get home to pick it up. Now I wan...
philips_lu Talking
Samsung 2510 development board, which one is better? Does anyone have any recommendations?
Samsung 2510 development board, which one is better? Does anyone have any recommendations?...
mymehis Embedded System
ERROR:Pack:1107 - Unable to combine the following symbols into a single IOB
ERROR:Pack:1107 - Unable to combine the following symbols into a single IOB component:PAD symbol "fosc_j" (Pad Signal = fosc_j)BUF symbol "fosc_j_IBUF" (Output Signal = fosc_j_IBUF) Each of the follow...
eeleader FPGA/CPLD
Optocoupler Knowledge Tutorial
The main contents are as follows. Worth collecting. Application of photocouplers Main features of photocouplers Detection methods of photocouplers Main parameters of photocouplers Main parameters of p...
kejuyuan Analog electronics
Previous Topics of the National Undergraduate Electronic Design Competition
[i=s] This post was last edited by paulhyde on 2014-9-15 04:20 [/i] Previous Topics of the National Undergraduate Electronic Design Competition...
hhs Electronics Design Contest
Differences and connections between transmitters and sensors
[url=http://www.designnews.com.cn//word/15192.aspx]Sensor[/url] is a general term for devices or equipment that can be measured by a specified amount and converted into a usable output signal accordin...
songbo Sensor

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2597  867  1066  2306  1553  53  18  22  47  32 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号