MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16PM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR16PM
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
17
5.0
1.2
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
13.5 MIN
3.6
1.3 MAX
0.8
2.54
2.54
8.5
0.5
2.6
•
•
•
•
•
I
T (RMS)
...................................................................... 16A
V
DRM
....................................................................... 600V
I
FGT
!
, I
RGT
!
, I
RGT
#
............................................ 20mA
V
iso
........................................................................ 2000V
UL Recognized:Yellow Card No. E80276(N)
File No. E80271
123
2
∗
Measurement point of
case temperature
1
1
T
1
TERMINAL
2
T
2
TERMINAL
3 3
GATE TERMINAL
TO-220F
APPLICATION
Contactless AC switches, light dimmer, electric flasher unit, hair drier, control of household equipment
such as TV sets · refrigerator · washing machine · electric fan,
other general purpose control applications
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
½1
Non-repetitive peak off-state
voltage
½1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Typical value
4.5
Conditions
Commercial power frequency, sine full wave 360° conduction, T
c
=71°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
16
160
106.5
5.0
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
½1.
Gate open.
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16PM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
½4
Parameter
Repetitive peak off-state current
On-state voltage
!
Gate trigger voltage
½2
@
#
!
Gate trigger
current
½2
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to
T
j
=125°C
case
½3
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=25A, Instantaneous measurement
Min.
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
—
3.0
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
—
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
—
—
0.2
—
10
½2.
Measurement using the gate trigger characteristics measurement circuit.
½3.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
½4.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c
=–8.0A/ms
3. Peak off-state voltage
V
D
=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
SURGE ON-STATE CURRENT (A)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
ON-STATE CURRENT (A)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
T
j
= 125°C
T
j
= 25°C
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16PM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
(Ι,
ΙΙ
AND
ΙΙΙ)
100 (%)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
3
2 V
GM
= 10V
GATE VOLTAGE (V)
P
G(AV)
= 0.5W
P
GM
= 5W
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
10
1
7
5
3 V
GT
= 1.5V
2
10
0
7
5
3
2
I
GM
= 2A
I
RGT III
I
FGT I,
I
RGT I
I
FGT I,
I
RGT I,
I
RGT III
V
GD
= 0.2V
10
–1
7
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
GATE CURRENT (mA)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (°C/W)
10
2
2 3 5 7 10
3
2 3
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
TRANSIENT THERMAL IMPEDANCE (°C/W)
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
10
3
NO FINS
40
35
30 360°
CONDUCTION
25 RESISTIVE,
INDUCTIVE
20 LOADS
15
10
5
0
0
2
4
6
8 10 12 14 16 18 20
10
2
10
1
10
0
10
–1
10
1
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
2 3 5 7
10
5
CONDUCTION TIME
(CYCLES AT 60Hz)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16PM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CASE TEMPERATURE (°C)
140
120
100
80
60
AMBIENT TEMPERATURE (°C)
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
CURVES APPLY REGARDLESS
120
OF CONDUCTION ANGLE
100
80
60
40
20
0
0
2
4
6
8 10 12 14 16 18 20
120 120 t 2.3
100 100 t 2.3
60 60 t 2.3
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0 2 4 6 8 10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS, CURVES
140
APPLY REGARDLESS OF
120
CONDUCTION ANGLE RESISTIVE,
INDUCTIVE LOADS
100
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
–40
LACHING CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
LACHING CURRENT (mA)
DISTRIBUTION
+
T
2
, G
–
TYPICAL
EXAMPLE
+
T
2
, G
+
TYPICAL
½
–
T
2
, G
–
EXAMPLE
0
40
80
120
160
JUNCTION TEMPERATURE (°C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16PM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
140
TYPICAL EXAMPLE
T
j
= 125°C
160
TYPICAL EXAMPLE
140
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
120
III QUADRANT
100
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
I QUADRANT
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
7
TYPICAL
5
EXAMPLE
3 T
j
= 125°C
2 I
T
= 4A
τ
= 500µs
V
D
= 200V
10
1
f = 3Hz
7
5
MINIMUM
3 CHARAC-
2 TERISTICS
VALUE
10
0
7
0
10
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
V
D
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
100 (%)
TYPICAL EXAMPLE
I
FGT I
I
RGT I
I
RGT III
I QUADRANT
III QUADRANT
2 3
5 7 10
1
2 3
5 7 10
2
2 3
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
TEST PROCEDURE
3
Mar. 2002
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