CYStech Electronics Corp.
Dual N-CHANNEL ENHANCEMENT MODE MOSFET
Spec. No. : C446N6
Issued Date : 2009.06.15
Revised Date : 2013.09.06
Page No. : 1/7
MTDNK2N6
Description
BV
DSS
60V
I
D
0.51A
R
DSON(MAX)
1.6Ω
The MTDNK2N6 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
•
Simple drive requirement
•
Low on-resistance
•
Small package outline
•
Pb-free package
Equivalent Circuit
MTDNK2N6
* with gate protection diode
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
A
=25
°C
Pulsed Drain Current
(Note 2, 3)
Symbol
V
DS
V
GS
(Note 1)
Limits
60
±20
0.51
1.5
0.96
0.016
-55~+150
130
Unit
V
V
A
A
W
W /
°C
°C
°C/W
I
D
I
DM
Pd
Tj, Tstg
Rth,ja
Total Power Dissipation @ T
A
=25
°C
Linear Derating Factor
Operating Junction Temperature and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
(Note 1)
Note : 1.Surface mounted on 0.125 in² copper pad of FR-4 board. 180
℃
/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width
≤300μs,
Duty Cycle≤2%
MTDNK2N6
CYStek Product Specification
CYStech Electronics Corp.
Electrical
Characteristics (Ta=25°C, unless otherwise noted)
Symbol
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
DSS
*R
DS(ON)
*G
FS
Ciss
Coss
Crss
t
d(ON)
t
r
t
d(OFF)
t
f
Qg
Qgs
Qgd
Min.
60
1
-
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
Typ.
-
1.6
-
-
-
1.4
1.1
-
62.7
17.6
9
8
7
13
6
1.1
0.2
0.4
Max.
-
2.5
±5
1
10
2
1.6
-
-
-
-
20
20
20
20
-
-
-
Unit
V
V
μA
μA
μA
Ω
mS
pF
Spec. No. : C446N6
Issued Date : 2009.06.15
Revised Date : 2013.09.06
Page No. : 2/7
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
GS
=±20V, V
DS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V, Tj=125℃
I
D
=100mA, V
GS
=5V
I
D
=500mA, V
GS
=10V
V
DS
=10V, I
D
=200mA
V
DS
=25V, V
GS
=0, f=1MHz
ns
V
DS
=25V, I
D
=0.25A,
V
GS
=10V, R
G
=25Ω
V
DS
=25V, I
D
=0.51A,
V
GS
=10V,
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
nC
Source Drain Diode
Symbol
*I
S
*I
SM
*V
SD
Min.
-
-
-
Typ.
-
-
0.87
Max.
0.51
1.5
1.2
Unit
A
V
I
S
=510mA,V
GS
=0V
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
Test Conditions
Ordering Information
Device
MTDNK2N6-0-T1-G
Package
SOT-26
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTDNK2N6
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Typical Output Characteristics
1
0.9
Drain Current --- ID(A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
Drain-Source Voltage ---VDS(V)
4
TA=25°C
10V
6V
4.5V
4.0V
3.5V
VGS=3V
Spec. No. : C446N6
Issued Date : 2009.06.15
Revised Date : 2013.09.06
Page No. : 3/7
Typical Output Characteristics
1
0.9
Drain Current --- ID(A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
Drain-Source Voltage---VDS(V)
4
TA=125°C
10V
6V
4.5V
4.0V
3.5V
VGS=3V
Typical Transfer Characteristics
1000
900
800
Drain Current ---ID(mA)
700
600
500
400
300
200
100
0
0
1
2
3
4
5
Gate-Source Voltage---VGS(V)
6
VDS=5V
Breakdown Voltage Variation with Temperature
1.05
Normalized Drain-Source Breakdown
Voltage
1.03
1.01
0.99
0.97
0.95
0
25
50
75
100
125
Junction Temperature---TJ(°C)
150
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State resistance vs Drain Current
3
Static Drain-Source On-State Resistance-
RDS(on)(Ω)
3
Static Drain-Source On-State Resistance-
RDS(on)(Ω)
VGS=3.5V
VGS=3.5V
2
2
VGS=5V
VGS=5V
TA=25°C
TA=125°C
1
0.001
0.01
0.1
Drain Current-ID(A)
1
1
0.001
0.01
0.1
Drain Current-ID(A)
1
MTDNK2N6
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Spec. No. : C446N6
Issued Date : 2009.06.15
Revised Date : 2013.09.06
Page No. : 4/7
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
5
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
5
TA=25°C
TA=125°C
4
3
2
1
0
0
2
4
6
8
Gate-Source Voltage-VGS(V)
10
4
3
ID=300mA
ID=300mA
2
ID=50mA
ID=50mA
1
0
0
2
4
6
8
Gate-Source Voltage-VGS(V)
10
Reverse Drain Current vs Source-Drain Voltage
1.2
1
0.8
TA=125°C
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
Reverse Drain Current -IDR(A)
1.4
1.6
TA=25°C
Capacitance vs Drain-to-Source Voltage
100
Ciss
Source-Drain Voltage-VSD(V)
Capacitance---(pF)
C
oss
10
Crss
1
0
5
10
15
20
25
Drain-Source Voltage -VDS(V)
30
MTDNK2N6
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C446N6
Issued Date : 2009.06.15
Revised Date : 2013.09.06
Page No. : 5/7
Carrier Tape Dimension
MTDNK2N6
CYStek Product Specification
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