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5962-01-100-8194

Description
IC,OP-AMP,SINGLE,BIPOLAR,CAN,8PIN,METAL
CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size93KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

5962-01-100-8194 Overview

IC,OP-AMP,SINGLE,BIPOLAR,CAN,8PIN,METAL

5962-01-100-8194 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeBCY
package instruction, CAN8,.2
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Amplifier typeOPERATIONAL AMPLIFIER
ArchitectureVOLTAGE-FEEDBACK
Maximum bias current (IIB) at 25C0.2 µA
frequency compensationYES (AVCL>=3)
Maximum input offset voltage10000 µV
JESD-30 codeO-MBCY-W8
low-dissonanceNO
Humidity sensitivity level1
Nominal Negative Supply Voltage (Vsup)-15 V
Number of functions1
Number of terminals8
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialMETAL
Encapsulate equivalent codeCAN8,.2
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
power supply+-15 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
minimum slew rate84 V/us
Maximum slew rate6.5 mA
Supply voltage upper limit20 V
Nominal supply voltage (Vsup)15 V
technologyBIPOLAR
Temperature levelMILITARY
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Minimum voltage gain7500

5962-01-100-8194 Preview

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October 11, 2004
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1- 888-
®
HA-2520/883
FN3735.3
Uncompensated, High Slew Rate
Operational Amplifier
The HA-2520/883 is a monolithic operational amplifier which
delivers an unsurpassed combination of specifications for
slew rate, bandwidth and settling time. This dielectrically
isolated amplifier is designed for closed loop gains of 3 or
greater without external compensation. In addition, this high
performance component also provides low offset current and
high input impedance.
The 100V/µs (min) slew rate and fast settling time of this
amplifier make it ideal for pulse amplification and data
acquisition designs. To insure compliance with slew rate and
transient response specifications, the device is 100% tested
for AC performance characteristics over full temperature.
This device is a valuable component for RF and video
circuitry requiring wideband operation. For accurate signal
conditioning designs, the HA-2520/883’s superior dynamic
specifications are complemented by 25nA (max) offset
current and offset voltage adjust capability.
Features
• This Circuit is Processed in Accordance to MIL-STD-883
and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . .100V/µs (Min)
120V/µs (Min)
• Wide Power Bandwidth . . . . . . . . . . . . . . . . 1.5MHz (Min)
• Wide Gain Bandwidth. . . . . . . . . . . . . . . . . . .10MHz (Min)
20MHz (Typ)
• High Input Impedance . . . . . . . . . . . . . . . . . . 50MΩ (Min)
100MΩ (Typ)
• Low Offset Current . . . . . . . . . . . . . . . . . . . . . . 25nA (Min)
10nA (Typ)
• Fast Settling (0.1% of 10V Step) . . . . . . . . . . 200ns (Typ)
• Low Quiescent Supply Current . . . . . . . . . . . . 6mA (Max)
Pinout
HA-2520/883
(METAL CAN)
TOP VIEW
Part Number Information
PART
NUMBER
HA2-2520/883
TEMP. RANGE
(
o
C)
-55
o
C to +125
o
C
PACKAGE
8 Pin Can
PKG. NO.
T8.C
BAL
COMP
8
1
-
+
3
4
V-
5
7
V+
Applications
• Data Acquisition Systems
• RF Amplifiers
• Video Amplifiers
• Signal Generators
• Pulse Amplification
-IN
2
6 OUT
+IN
BAL
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002, 2004. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
HA-2520/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . .40V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . V+ to V-
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175
o
C
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<2000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . .+300
o
C
Thermal Information
θ
JC
Thermal Resistance
θ
JA
o
C/W
Metal Can Package . . . . . . . . . . . . . . . . . 160
75
o
C/W
o
C for T
+175
o
C
Package Power Dissipation Limit at +75
J
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Package Power Dissipation Derating Factor Above +75
o
C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.3mW/
o
C
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Operating Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
V
INCM
1/2 (V+ - V-)
R
L
2kΩ
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379
for details.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 100Ω, R
LOAD
= 500kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
1
2, 3
+I
B
V
CM
= 0V, +R
S
= 100kΩ, -R
S
= 100Ω
1
2, 3
-I
B
V
CM
= 0V, +R
S
= 100Ω, -R
S
= 100kΩ
1
2, 3
Input Offset
Current
Common Mode
Range
I
IO
V
CM
= 0V, +R
S
= 100kΩ, -R
S
= 100kΩ
1
2, 3
+CMR
V+ = 5V, V- = -25V
1
2, 3
-CMR
V+ = 25V, V- = -5V
1
2, 3
Large Signal
Voltage Gain
+A
VOL
V
OUT
= 0V and +10V, R
L
= 2kΩ
4
5, 6
-A
VOL
V
OUT
= 0V and -10V, R
L
= 2kΩ
4
5, 6
Common Mode
Rejection Ratio
+CMRR
∆V
CM
= +10V, V+ = +5V, V- = -25V,
V
OUT
= -10V
∆V
CM
= -10V, V+ = +25V, V- = -5V,
V
OUT
= +10V
R
L
= 2kΩ
1
2, 3
1
2, 3
4
5, 6
-V
OUT
R
L
= 2kΩ
4
5, 6
HA-2520/883
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-8
-10
-200
-400
-200
-400
-25
-50
+10
+10
-
-
10
7.5
10
7.5
80
80
80
80
10
10
-
-
MAX
8
10
200
400
200
400
25
50
-
-
-10
-10
-
-
-
-
-
-
-
-
-
-
-10
-10
UNITS
mV
mV
nA
nA
nA
nA
nA
nA
V
V
V
V
kV/V
kV/V
kV/V
kV/V
dB
dB
dB
dB
V
V
V
V
PARAMETERS
Input Offset
Voltage
Input Bias Current
SYMBOL
V
IO
V
CM
= 0V
CONDITIONS
-CMRR
Output Voltage
Swing
+V
OUT
2
HA-2520/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 100Ω, R
LOAD
= 500kΩ, V
OUT
= 0V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
4
5, 6
-I
OUT
V
OUT
= +10V
4
5, 6
Quiescent Power
Supply Current
+I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
-I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
Power Supply
Rejection Ratio
+PSRR
∆V
SUP
= 10V, V+ = +20V, V- = -15V, V+
= +10V, V- = -15V
∆V
SUP
= 10V, V+ = +15V, V- = -20V, V+
= +15V, V- = -10V
Note 1
1
2, 3
1
2, 3
1
2, 3
-V
IO
Adj
Note 1
1
2, 3
NOTE:
2. Offset adjustment range is [V
IO
(Measured)
±1mV]
minimum referred to output. This test is for functionality only to assure adjustment through 0V.
HA-2520/883
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
10
7.5
-
-
-
-
-6
-6.5
80
80
80
80
V
IO
-1
V
IO
-1
V
IO
+1
V
IO
+1
MAX
-
-
-10
-7.5
6
6.5
-
-
-
-
-
-
-
-
-
-
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
mV
mV
mV
mV
PARAMETERS
Output Current
SYMBOL
+I
OUT
CONDITIONS
V
OUT
= -10V
-PSRR
Offset Voltage
Adjustment
+V
IO
Adj
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= +3V/V, Unless Otherwise Specified.
GROUP A
SUBGROUPS
7
8A, 8B
-SR
V
OUT
= +5V to -5V, 75%
-SR
25%
7
8A, 8B
Rise and Fall Time
T
R
V
OUT
= 0 to +200mV, 10%
T
R
90%
7
8A, 8B
T
F
V
OUT
= 0 to -200mV, 10%
T
F
90%
7
8A, 8B
Overshoot
+OS
V
OUT
= 0 to +200mV
7
8A, 8B
-OS
V
OUT
= 0 to -200mV
7
8A, 8B
HA-2520/883
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
100
84
100
84
-
-
-
-
-
-
-
-
MAX
-
-
-
-
50
55
50
55
40
45
40
45
UNITS
V/µs
V/µs
V/µs
V/µs
ns
ns
ns
ns
%
%
%
%
PARAMETERS
Slew Rate
SYMBOL
+SR
CONDITIONS
V
OUT
= -5V to +5V, 25%
+SR
75%
3
HA-2520/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
V
3, C
COMP
= 0pF, Unless Otherwise Specified.
HA-2520/883
PARAMETERS
Differential Input
Resistance
Full Power
Bandwidth
Full Power
Bandwidth
Minimum Closed
Loop Stable Gain
Quiescent Power
Consumption
NOTES:
3. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters
are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon
data from multiple production runs which reflect lot to lot and within lot variation.
4. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
5. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
SYMBOL
R
IN
GBWP
V
CM
= 0V
V
O
= 200mV, f
O
= 10kHz
V
O
= 200mV, f
O
= 1MHz
FPBW
CLSG
PC
V
PEAK
= 10V
R
L
= 2kΩ, C
L
= 50pF
V
OUT
= 0V, I
OUT
= 0mA
CONDITIONS
NOTES
1
1
1
1, 2
1
1, 3
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
MIN
50
10
10
1.6
+3
-
MAX
-
-
-
-
-
195
UNITS
MΩ
MHz
MHz
MHz
V/V
mW
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
6. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 4), 2, 3, 4, 5, 6, 7, 8A, 8B
1, 2, 3, 4, 5, 6, 7, 8A, 8B
1
4
HA-2520/883
Die Characteristics
DIE DIMENSIONS:
67 x 57 x 19 mils
±
1 mils
1700 x 1440 x 483µm
±
25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ
±
2kÅ
Nitride Thickness: 3.5kÅ
±
1.5kÅ
WORST CASE CURRENT DENSITY:
0.26 x 10
5
A/cm
2
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT:
HA-2520/883: 40
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
COMP
V+
OUT
BAL
BAL
-IN
+IN
V-
5

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