33C408RPFE-25 datasheet, PDF - EEWORLD Datasheet

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33C408RPFE-25: DescriptionStandard SRAM, 512KX8, 25ns, CMOS, DFP-32; Categorystorage storage; File Size153KB，12 Pages; ManufacturerMaxwell Technologies Inc.

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33C408RPFE-25 Overview

Standard SRAM, 512KX8, 25ns, CMOS, DFP-32

33C408RPFE-25 Parametric

Parameter Name	Attribute value
Maker	Maxwell Technologies Inc.
Parts packaging code	DFP
package instruction	DFP,
Contacts	32
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	25 ns
JESD-30 code	R-XDFP-F32
length	23.622 mm
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Package body material	UNSPECIFIED
encapsulated code	DFP
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	3.937 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
total dose	100k Rad(Si) V
width	16.383 mm

33C408RPFE-25 Preview

33C408

4 Megabit (512K x 8-Bit)

CMOS SRAM

Memory

Logic Diagram

EATURES

• R

-P

® Technology radiation-hardened

against natural space radiation

• 524,288 x 8 bit organization

· Total dose hardness:

- > 100 krad (Si), depending upon space mis-

sion

• Excellent Single Event Effect

- SEL

: > 68 MeV/mg/cm

· - SEU

: = 3 MeV/mg/cm

•

- SEU saturated cross section: 6E-9 cm

/bit

Package:

- 32-Pin R

-P

® flat pack

- 32-Pin Non-R

-P

® flat pack

Fast access time:

- 20, 25, 30 ns maximum times available

Single 5V + 10% power supply

Fully static operation

- No clock or refresh required

Three state outputs

TTL compatible inputs and outputs

Low power:

- Standby: 60 mA (TTL); 10 mA (CMOS)

- Operation: 180 mA (20 ns); 170 mA (25 ns);

160 mA (30 ns)

ESCRIPTION

Maxwell Technologies’ 33C408 high-density 4

Megabit SRAM microcircuit features a greater than

100 krad (Si) total dose tolerance, depending upon

space mission. Using Maxwell’s radiation-hard-

ened R

-P

® packaging technology, the 33C408

realizes a high density, high performance, and low

power consumption. Its fully static design elimi-

nates the need for external clocks, while the

CMOS circuitry reduces power consumption and

provides higher reliability. The 33C408 is equipped

with eight common input/output lines, chip select

and output enable, allowing for greater system flex-

ibility and eliminating bus contention. The 33C408

features the same advanced 512K x 8-bit SRAM,

high-speed, and low-power demand as the com-

mercial counterpart.

Maxwell Technologies' patented R

-P

packag-

ing technology incorporates radiation shielding in

the microcircuit package. It eliminates the need for

box shielding while providing the required radiation

shielding for a lifetime in orbit or space mission. In

a GEO orbit, R

-P

provides greater than 100

krad (Si) radiation dose tolerance. This product is

available with screening up to Class S.

•

04.16.02 REV 8

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com

4 Megabit (512K x 8-Bit) CMOS SRAM

33C408

ABLE

1. P

INOUT

ESCRIPTION

12-5, 27, 26, 23, 25, 4,

28, 3, 31, 2, 30, 1

13-15, 17-21

YMBOL

A0-A18

I/O 1-I/O 8

ESCRIPTION

Address Inputs

Write Enable

Chip Select

Output Enable

Data Inputs/Outputs

Power (+5.0V)

Ground

ABLE

2. 33C408 A

BSOLUTE

AXIMUM

ATINGS

ARAMETER

Voltage on V

supply relative to V

Voltage on any pin relative to V

Power Dissipation

Storage Temperature

Operating Temperature

YMBOL

, V

OUT

-0.5

-65

-55

7.0

+0.5

1.0

+150

+125

NIT

ABLE

3. D

ELTA

IMITS

ARAMETER

CC1

SB1

ARIATION

±10% of stated vaule in Table 6

04.16.02 REV 8

All data sheets are subject to change without notice

4 Megabit (512K x 8-Bit) CMOS SRAM

ABLE

4. 33C408 R

ECOMMENDED

PERATING

ONDITIONS

= 5.0 + 10%, T

= -55

+125

UNLESS OTHERWISE NOTED

)

ARAMETER

Supply Voltage

Ground

Input High Voltage

Input Low Voltage

Thermal Impedance

1. V

(max) = V

+2.0V ac (pulse width < 10 ns) for I < 20 mA

(min) = -2.0V ac(pulse width < 10 ns) for I < 20 mA

YMBOL

4.5

2.2

-0.5

5.5

33C408

NIT

°C/W

+0.5

0.8

1.21

ABLE

5. 33C408 DC E

LECTRICAL

HARACTERISTICS

= 5V + 10%, T

= -55

+125

UNLESS OTHERWISE SPECIFIED

)

ARAMETER

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Operating Current

-20

-25

-30

Standby Power

Supply Current

CMOS Standby Power

Supply Current

Input Capacitance

Output Capacitance

1. Guaranteed by design.

YMBOL

ONDITION

= V

to V

CS=V

or OE=V

or WE=V

OUT

to V

= 8mA

= -4mA

Min cycle, 100% Duty, CS=V

, I

OUT

=0mA,

= V

or V

UBGROUPS

1, 2, 3

180

170

160

-2

2.4

0.4

NIT

µA

SB1

CS = V

, Min Cycle

CS > V

- 0.2V, f = 0 MHz, V

> V

- 0.2V

IN <

0.2V

= 0V, f = 1MHz, T

= 25 °C

I/O

= 0V

I/O

1, 2, 3

4, 5, 6

ABLE

6. 33C408 AC T

EST

ONDITIONS AND

HARACTERISTICS

= 5.0 + 10%, T

= -55

+125

UNLESS OTHERWISE NOTED

)

ARAMETER

Input Pulse Level

Output Timing Measurement Reference Level

04.16.02 REV 8

0.0

3.0

1.5

NITS

All data sheets are subject to change without notice

4 Megabit (512K x 8-Bit) CMOS SRAM

ABLE

6. 33C408 AC T

EST

ONDITIONS AND

HARACTERISTICS

= 5.0 + 10%, T

= -55

+125

UNLESS OTHERWISE NOTED

)

ARAMETER

Input Rise/Fall Time

Input Timing Measurement Reference Level

3.0

1.5

33C408

NITS

ABLE

7. 33C408 AC C

HARACTERISTICS FOR

EAD

YCLE

= 5V + 10%, T

= -55

+125

UNLESS OTHERWISE SPECIFIED

)

ARAMETER

Read Cycle Time

-20

-25

-30

Address Access Time

-20

-25

-30

Chip Select Access Time

-20

-25

-30

Output Enable to Output Valid

-20

-25

-30

Chip Enable to Output in Low-Z

-20

-25

-30

Output Enable to Output in Low-Z

-20

-25

-30

Chip Deselect to Output in High-Z

-20

-25

-30

Output Disable to Output in High-Z

-20

-25

-30

Output Hold from Address Change

-20

-25

-30

YMBOL

UBGROUPS

9, 10, 11

OLZ

9, 10, 11

OHZ

9, 10, 11

04.16.02 REV 8

NIT

All data sheets are subject to change without notice

4 Megabit (512K x 8-Bit) CMOS SRAM

ABLE

7. 33C408 AC C

HARACTERISTICS FOR

EAD

YCLE

= 5V + 10%, T

= -55

+125

UNLESS OTHERWISE SPECIFIED

)

ARAMETER

Chip Select to Power Up Time

-20

-25

-30

Chip Select to Power Down Time

-20

-25

-30

YMBOL

UBGROUPS

9, 10, 11

33C408

NIT

ABLE

8. 33C408 F

UNCTIONAL

ESCRIPTION

1. X = don’t care.

ODE

Not Select

Output Disable

Read

Write

I/O P

High-Z

OUT

UPPLY

URRENT

, I

SB1

Subgroups

ABLE

9. 33C408 AC C

HARACTERISTICS FOR

RITE

YCLE

= 5V + 10%, T

= -55

+125

UNLESS OTHERWISE SPECIFIED

)

ARAMETER

Write Cycle Time

-20

-25

-30

Chip Select to End of Write

-20

-25

-30

Address Setup Time

-20

-25

-30

Address Valid to End of Write

-20

-25

-30

UBGROUPS

9, 10, 11

YMBOL

9, 10, 11

NIT

04.16.02 REV 8

All data sheets are subject to change without notice

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