BC807 to BC808
Vishay Semiconductors
Small Signal Transistors (PNP)
Features
• PNP Silicon Epitaxial Planar Transistors for
switching, AF driver and amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
• These transistors are subdivided into three groups
(- 16, - 25, and - 40) according to their current
gain.
• As complementary types, the NPN transistors
BC817 and BC818 are recomended.
2
1
1
B
3
18978
C 3
E 2
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.8 mg
Pinning:
1 = Base, 2 = Emitter, 3 = Collector
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
Ordering code
BC807-16-GS08
BC807-25-GS08
BC807-40-GS08
BC808-16-GS08
BC808-25-GS08
BC808-40-GS08
5A
5B
5C
5E
5F
5G
Marking
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector - emitter voltage (Base
shorted)
Collector - emitter voltage (Base
open)
Emitter - base voltage
Collector current
Peak collector current
Peak base current
Peak emitter current
Power dissipation
1)
Test condition
Part
BC807
BC808
BC807
BC808
Symbol
- V
CES
- V
CES
- V
CEO
- V
CEO
- V
EBO
- I
C
- I
CM
- I
BM
I
EM
P
tot
Value
50
30
45
25
5
800
1000
200
1000
310
1)
Unit
V
V
V
V
V
mA
mA
mA
mA
mW
Device on fiberglass substrate, see layout on next page.
Document Number 85134
Rev. 1.2, 03-Jan-05
www.vishay.com
1
BC807 to BC808
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Thermal resistance junction to
ambient air
Thermal resistance junction to
substrate backside
Junction temperature
Storage temperature range
1)
Test condition
Symbol
Rθ
JA
Rθ
SB
T
j
T
S
Value
450
1)
320
1)
150
- 65 to + 150
Unit
°C/W
°C/W
°C
°C
Device on fiberglass substrate, see layout on next page.
Electrical DC Characteristics
Parameter
DC current gain (current gain
group - 16)
DC current gain (current gain
group - 25)
DC current gain (current gain
group - 40)
DC current gain
Collector saturation voltage
Base saturation voltage
Base - emitter voltage
Test condition
- V
CE
= 1 V, - I
C
= 100 mA
- V
CE
= 1 V, - I
C
= 100 mA
- V
CE
= 1 V, - I
C
= 100 mA
- V
CE
= 1 V, - I
C
= 500 mA
- I
C
= 500 mA, - I
B
= 50 mA
- I
C
= 500 mA, - I
B
= 50 mA
- V
CE
= 1 V, - I
C
= 500 mA
BC807
BC808
- V
CE
= 25 V
- V
CE
= 25 V, T
j
= 150 °C
Emitter - base cutoff current
- V
EB
= 4 V
Part
Symbol
h
FE
h
FE
h
FE
h
FE
- V
CEsat
V
BEsat
- V
BEon
- I
CES
- I
CES
- I
CES
- I
EBO
Min
100
160
250
40
0.7
1.3
1.2
100
100
5
100
V
V
V
nA
nA
µA
nA
Typ
Max
250
400
600
Unit
Collector - emitter cutoff current - V
CE
= 45 V
Electrical AC Characteristics
Parameter
Gain - bandwidth product
Collector - base capacitance
Test condition
- V
CE
= 5 V, - I
C
= 10 mA,
f = 50 MHz
- V
CB
= 10 V, f = 1 MHz
Symbol
f
T
C
CBO
Min
Typ
100
12
Max
Unit
MHz
pF
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Document Number 85134
Rev. 1.2, 03-Jan-05
BC807 to BC808
Vishay Semiconductors
Layout for Rθ
JA
test
Thickness: Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
12 (0.47)
15 (0.59)
0.8 (0.03)
2 (0.8)
1 (0.4)
2 (0.8)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
mW
500
400
P
tot 300
200
100
0
19190
mA
3
10
25 °C
150 °C
50 °C
typical
limits
@ Tamb = 25 °C
-I
C
10
2
10
1
0
100
T
SB
200 °C
19177
-1
10
0
1
-V BE
2
V
Figure 1. Admissible Power Dissipation vs. Temperature of
Substrate Backside
Figure 2. Collector Current vs. Base-Emitter Voltage
Document Number 85134
Rev. 1.2, 03-Jan-05
www.vishay.com
3
BC807 to BC808
Vishay Semiconductors
10
0
0.5
0.2
1000
-V
CE
= 1V
10
rthSB
R thSB
-1
0.1
0.05
0.02
0.01
0.005
½
=0
tp
½=
T
tp
T
hFE
25 °C
100
Tamb = 25 °C
150 °C
- 50 °C
10
-2
PI
10
-1
10
19173
10
-7
10 10
-6
19191
-3
10
-5
10
-4
10
-3
t
p
10
-2
10
-1
1s
1
10
-IC
10
2
10
3
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
(normalized)
MHz
3
Figure 6. DC Current Gain vs. Collector Current
10
Tamb = 25 °C
f = 20 MHz
V
2
f
T
10
2
-VCE = 5
V
1
V
-VBEsat
1
-IC
= 10
-IB
typical
limits
@ Tamb = 25 °C
- 50 °C
25 °C
150 °C
10
1
19192
10
-IC
10
2
10
3
mA
19194
0
10
-1
1
10
-IC
10
2
10
mA
3
Figure 4. Gain-Bandwidth Product vs. Collector Current
Figure 7. Base Saturation Voltage vs. Collector Current
V
0.5
0.4
-VCEsat
0.3
0.2
-IC
= 10
-IB
typical
limits
@ Tamb = 25 °C
-IC
mA
500
3.2
2.8
2.4
2
1.8
1.6
1.4
1.2
0.8
1
0.6
0.4
-IB = 0.2 mA
400
300
200
0.1
150 °C
25 °C
- 50 °C
2
3
100
0
19175
0
19193
10
-1
1
10
-IC
10
10
mA
0
1
-VCE
2
V
Figure 5. Collector Saturation Voltage vs. Collector Current
Figure 8. Common Emitter Collector Characteristics
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Document Number 85134
Rev. 1.2, 03-Jan-05
BC807 to BC808
Vishay Semiconductors
mA
100
0.35
0.3
0.25
60
40
0.2
0.15
0.1
20
-IB = 0.05 mA
0
10
-VCE
20
V
19174
mA
500
0.9
0.85
80
-I C
400
-IC
300
0.8
200
100
0.75
-VBE = 0.7
V
0
1
-VCE
2
V
0
19176
0
Figure 9. Common Emitter Collector Characteristics
Figure 10. Common Emitter Collector Characteristics
Package Dimensions in mm (Inches)
1.15 (.045)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
0.4 (.016)
0.4 (.016)
2.6 (.102)
2.35 (.092)
0.95 (.037)
ISO Method E
3.1 (.122)
2.8 (.110)
0.4 (.016)
3
1.43 (.056)
1.20(.047)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
2.0 (0.079)
1
0.95 (.037)
2
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
Document Number 85134
Rev. 1.2, 03-Jan-05
www.vishay.com
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