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BC808-25-GS08

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size332KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BC808-25-GS08 Overview

Transistor,

BC808-25-GS08 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.8 A
ConfigurationSingle
Minimum DC current gain (hFE)160
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.31 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
BC807 to BC808
Vishay Semiconductors
Small Signal Transistors (PNP)
Features
• PNP Silicon Epitaxial Planar Transistors for
switching, AF driver and amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
• These transistors are subdivided into three groups
(- 16, - 25, and - 40) according to their current
gain.
• As complementary types, the NPN transistors
BC817 and BC818 are recomended.
2
1
1
B
3
18978
C 3
E 2
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.8 mg
Pinning:
1 = Base, 2 = Emitter, 3 = Collector
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
Ordering code
BC807-16-GS08
BC807-25-GS08
BC807-40-GS08
BC808-16-GS08
BC808-25-GS08
BC808-40-GS08
5A
5B
5C
5E
5F
5G
Marking
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector - emitter voltage (Base
shorted)
Collector - emitter voltage (Base
open)
Emitter - base voltage
Collector current
Peak collector current
Peak base current
Peak emitter current
Power dissipation
1)
Test condition
Part
BC807
BC808
BC807
BC808
Symbol
- V
CES
- V
CES
- V
CEO
- V
CEO
- V
EBO
- I
C
- I
CM
- I
BM
I
EM
P
tot
Value
50
30
45
25
5
800
1000
200
1000
310
1)
Unit
V
V
V
V
V
mA
mA
mA
mA
mW
Device on fiberglass substrate, see layout on next page.
Document Number 85134
Rev. 1.2, 03-Jan-05
www.vishay.com
1

BC808-25-GS08 Related Products

BC808-25-GS08 BC807-40-GS18 BC808-16-GS18 BC807-40-GS08 BC808-25-GS18
Description Transistor, Transistor, Transistor, Transistor, Transistor,
Is it Rohs certified? conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown unknown unknown
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
Configuration Single Single Single Single Single
Minimum DC current gain (hFE) 160 250 100 250 160
JESD-609 code e3 e3 e3 e3 e3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.31 W 0.31 W 0.31 W 0.31 W 0.31 W
surface mount YES YES YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Maker Vishay - - Vishay Vishay
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