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MT45W8MW16BGX-706LIT

Description
Pseudo Static RAM, 8MX16, 70ns, CMOS, PBGA54, 8 X 10 MM, 1 MM HEIGHT, 0.75 MM PITCH, GREEN, VFBGA-54
Categorystorage    storage   
File Size743KB,64 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT45W8MW16BGX-706LIT Overview

Pseudo Static RAM, 8MX16, 70ns, CMOS, PBGA54, 8 X 10 MM, 1 MM HEIGHT, 0.75 MM PITCH, GREEN, VFBGA-54

MT45W8MW16BGX-706LIT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionVFBGA, BGA54,6X9,30
Contacts54
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B54
JESD-609 codee1
length10 mm
memory density134217728 bit
Memory IC TypePSEUDO STATIC RAM
memory width16
Number of functions1
Number of terminals54
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA54,6X9,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8,1.8/3 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum standby current0.00016 A
Maximum slew rate0.025 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm
PRELIMINARY
8 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
128Mb BURST
CellularRAM
TM
1.5
Features
• Single device supports asynchronous, page, and
burst operations
• Vcc, VccQ Voltages
1.7V–1.95V Vcc
1.7V–1.95V VccQ
• Random Access Time: 70ns
• Burst Mode READ and WRITE Access
4, 8, 16, or 32 words, or continuous burst
Burst wrap or sequential
MAX clock rate: 104 MHz (
t
CLK = 9.62ns)
Burst initial latency: 39ns (4 clocks) @ 104 MHz
t
ACLK: 7ns @ 104 MHz
• Page Mode Read Access
Sixteen-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
• Low Power Consumption
Asynchronous READ: < 30mA
Intrapage Read: < 15mA
Initial access, burst READ:
(39ns [4 clocks] @ 104 MHz) < 40mA
Continuous burst READ: < 25mA
Standby: < 40µA (TYP at 25 °C)
Deep power-down: < 3µA (TYP)
• Low-Power Features
On-chip Temperature Compensated Refresh (TCR)
Partial Array Refresh (PAR)
Deep Power-Down (DPD) Mode
Options
• Configuration:
8 Meg x 16
V
CC
Core Voltage Supply: 1.8V
V
CC
Q I/O Voltage Supply: 1.8V
• Package
54-ball VFBGA—”green”
• Timing
70ns access
85ns access
Designator
MT45W8MW16B
MT45W8MW16BGX
Figure 1:
Ball Assignment 54-Ball VFBGA
1
A
B
C
D
E
F
G
H
J
LB#
2
OE#
3
A0
4
A1
5
A2
6
CRE
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
V
CC
Q
DQ12
A21
A16
DQ4
V
SS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
WAIT
CLK
ADV#
A22
RFU
RFU
Top View
(Ball Down)
GX
-70
-85
Options (continued)
• Frequency
66 MHz
80 MHz
104 MHz
• Standby Power at 85°C
Standard: 200µA (MAX)
Low-power: 160µA (MAX)
• Operating Temperature Range
Wireless (-30°C to +85°C)
Industrial (-40°C to +85°C)
Designator
6
8
1
None
L
WT
IT
Part Number Example:
MT45W8MW16BGX-701LWT
09005aef80ec6f79 pdf/09005aef80ec6f65 zip
Burst CellularRAM_128__1.fm - Rev. A 9/04 EN
1
©2003 Micron Technology, Inc. All rights reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
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