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ESH2CR5G

Description
Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size369KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

ESH2CR5G Overview

Rectifier Diode, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

ESH2CR5G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionSMB, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Humidity sensitivity level1
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage150 V
Maximum reverse current2 µA
Maximum reverse recovery time0.02 µs
surface mountYES
Terminal surfacePure Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
ESH2B thru ESH2D
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Ultra fast recovery time for high efficiency
- Moisture sensitivity: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Ultra Fast Rectifiers
MECHANICAL DATA
Case:DO-214AA(SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal:Matte
tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:Indicated
by cathode band
Weight:0.09
gram (approximately)
DO-214AA(SMB)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@2A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJL
R
θJA
T
J
T
STG
ESH2B
100
70
100
ESH2C
150
105
150
2
60
0.90
2
50
20
25
20
75
- 55 to + 175
- 55 to + 175
O
ESH2D
200
140
200
UNIT
V
V
V
A
A
V
uA
nS
pF
C/W
O
O
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1:Pulse test with PW=300u sec, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
C
C
Document Number:DS_D1309020
Version:E13
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