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MT45W2MV16PAFA-85LIT

Description
Pseudo Static RAM, 2MX16, 85ns, CMOS, PBGA48, FBGA-48
Categorystorage    storage   
File Size332KB,27 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT45W2MV16PAFA-85LIT Overview

Pseudo Static RAM, 2MX16, 85ns, CMOS, PBGA48, FBGA-48

MT45W2MV16PAFA-85LIT Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeBGA
package instructionVFBGA,
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time85 ns
JESD-30 codeR-PBGA-B48
JESD-609 codee0
length8 mm
memory density33554432 bit
Memory IC TypePSEUDO STATIC RAM
memory width16
Number of functions1
Number of terminals48
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)235
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead/Silver (Sn/Pb/Ag)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width6 mm
ADVANCE
2 MEG x 16, 1 MEG x 16
ASYNC/PAGE CellularRAM MEMORY
ASYNCHRONOUS
CellularRAM
TM
Features
• Asynchronous and Page Mode interface
• Random Access Time: 70ns, 85ns
• Page Mode Read Access
Sixteen-word page size
Interpage read access: 70ns, 85ns
Intrapage read access: 20ns, 25ns
• V
CC
, V
CC
Q Voltages
1.70V–1.95V V
CC
1.70V–2.25V V
CC
Q (Option W)
2.30V–2.70V V
CC
Q (Option V—contact factory)
2.70V–3.30V V
CC
Q (Option L)
• Low Power Consumption
Asynchronous READ < 25mA
Intrapage READ < 15mA
Standby: 110µA (32Mb—standard), 70µA (16Mb)
90µA (32Mb—low-power option)
Deep Power-Down < 10µA
• Low-Power Features
Temperature Compensated Refresh (TCR)
On-Chip Sensor Control
Partial Array Refresh (PAR)
Deep Power-Down (DPD) Mode
MT45W2MW16PAFA
MT45W2ML16PAFA
MT45W1MW16PAFA
MT45W1ML16PAFA
Figure 1: 48-Ball FBGA
1
A
B
C
D
E
F
G
H
LB#
2
OE#
3
A0
4
A1
5
A2
6
ZZ#
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
V
CC
Q
DQ12
NC
A16
DQ4
V
SS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
Top View
(Bump Down)
NOTE:
Options
Designator
• Configuration
2 Meg x 16
1 Meg x 16
• Vcc Core Voltage Supply
1.8V – MT45WxMx16PA
• VccQ I/O Voltage
3.0V – MT45WxML16PA
2.5V – MT45WxMV16PA
1.8V – MT45WxMW16PA
• Package
48-ball FBGA
48-ball FBGA—Lead-free
• Access Time
60ns
70ns
85ns
See Table 1 on page 3 for Ball Descriptions. See Figure 21
on page 24 for the 48-ball mechanical drawing.
Options (continued)
Designator
MT45W2Mx16PA
MT45W1Mx16PA
W
L
V
1
W
FA
BA
1
-60
1
-70
-85
• Standby Power
Standard
Low-Power (32Mb)
• Operating Temperature Range
Wireless (-25°C to +85°C)
Industrial (-40°C to +85°C)
None
L
WT
IT
1
Note 1: Contact factory.
Part Number Example:
MT45W2ML16PAFA-70LWT
09005aef80d481d3
AsyncCellularRAM_16_32.fm - Rev. A 2/18/04 EN
1
©2004 Micron Technology, Inc. All Rights Reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
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