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M58BW016DB90T6T

Description
Flash, 512KX32, 90ns, PQFP80, PLASTIC, QFP-80
Categorystorage    storage   
File Size776KB,63 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M58BW016DB90T6T Overview

Flash, 512KX32, 90ns, PQFP80, PLASTIC, QFP-80

M58BW016DB90T6T Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeQFP
package instructionPLASTIC, QFP-80
Contacts80
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time90 ns
startup blockBOTTOM
JESD-30 codeR-PQFP-G80
length20 mm
memory density16777216 bit
Memory IC TypeFLASH
memory width32
Number of functions1
Number of terminals80
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX32
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height3.4 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationQUAD
typeNOR TYPE
width14 mm
M58BW016BT, M58BW016BB
M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst)
3V Supply Flash Memories
PE4FEATURES SUMMARY
s
SUPPLY VOLTAGE
– V
DD
= 2.7V to 3.6V for Program, Erase and
Read
– V
DDQ
= V
DDQIN
= 2.4V to 3.6V for I/O Buffers
– V
PP
= 12V for fast Program (optional)
s
Figure 1. Packages
HIGH PERFORMANCE
– Access Time: 80, 90 and 100ns
– 56MHz Effective Zero Wait-State Burst Read
– Synchronous Burst Reads
– Asynchronous Page Reads
PQFP80 (T)
s
HARDWARE BLOCK PROTECTION
– WP pin Lock Program and Erase
BGA
s
SOFTWARE BLOCK PROTECTION
– Tuning Protection to Lock Program and
Erase with 64 bit User Programmable Pass-
word (M58BW016B version only)
LBGA80 (ZA)
10 x 8 ball array
s
OPTIMIZED for FDI DRIVERS
– Fast Program / Erase suspend latency
time < 6µs
– Common Flash Interface
s
MEMORY BLOCKS
– 8 Parameters Blocks (Top or Bottom)
– 31 Main Blocks
s
LOW POWER CONSUMPTION
– 5µA Typical Deep Power Down
– 60µA Typical Standby
– Automatic Standby after Asynchronous Read
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M58BW016xT: 8836h
– Bottom Device Code M58BW016xB: 8835h
May 2003
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