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K8S3215ETD-DC7B0

Description
Flash, 2MX16, 90ns, PBGA44, 7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-44
Categorystorage    storage   
File Size858KB,37 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
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K8S3215ETD-DC7B0 Overview

Flash, 2MX16, 90ns, PBGA44, 7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-44

K8S3215ETD-DC7B0 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSAMSUNG
Parts packaging codeBGA
package instruction7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-44
Contacts44
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time90 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockTOP
JESD-30 codeR-PBGA-B44
JESD-609 codee1
length7.5 mm
memory density33554432 bit
Memory IC TypeFLASH
memory width16
Humidity sensitivity level2
Number of functions1
Number of terminals44
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
typeNOR TYPE
width5 mm

K8S3215ETD-DC7B0 Preview

K8S3215ETD
FLASH MEMORY
Document Title
32M Bit (2M x16) Muxed Burst , Multi Bank NOR Flash Memory
Revision History
Revision No. History
0.0
0.1
Initial
Revision
- Change the operating temperature range
-25°C ~ 85°C --> -40°C ~ 85°C
Revision
- Specification finalized
Draft Date
June 23, 2004
July 9, 2004
Remark
1.0
December 22, 2005
1
Revision 1.0
March, 2005
K8S3215ETD
FEATURES
Single Voltage, 1.7V to 1.95V for Read and Write operations
Organization
- 2,097,152 x 16 bit ( Word Mode Only)
Multiplexed Data and Address for reduction of interconnections
- A/DQ0 ~ A/DQ15
Read While Program/Erase Operation
Multiple Bank Architecture
- 16 Banks (2Mb Partition)
Read Access Time (@ C
L
=30pF)
- Asynchronous Random Access Time : 90ns (54MHz)
- Synchronous Random Access Time : 88.5ns (54MHz)
- Burst Access Time : 14.5ns (54MHz)
Burst Length :
- Continuous Linear Burst
- Linear Burst : 8-word & 16-word with No-wrap & Wrap
Block Architecture
- Eight 4Kword blocks and sixty three 32Kword blocks
- Bank 0 contains eight 4 Kword blocks and three 32 Kword
blocks
- Bank 1 ~ Bank 15 contain sixty 32Kword blocks
Reduce program time using the V
PP
Power Consumption (Typical value, C
L
=30pF)
- Burst Access Current : 25mA
- Program/Erase Current : 15mA
- Read While Program/Erase Current : 35mA
- Standby Mode/Auto Sleep Mode : 5uA
Block Protection/Unprotection
- Using the software command sequence
- Last two boot blocks are protected by WP=V
IL
- All blocks are protected by V
PP
=V
IL
Handshaking Feature
- Provides host system with minimum latency by monitoring
RDY
Erase Suspend/Resume
Program Suspend/Resume
Unlock Bypass Program/Erase
Hardware Reset (RESET)
Data Polling and Toggle Bits
- Provides a software method of detecting the status of program
or erase completion
Endurance
100K Program/Erase Cycles Minimum
Data Retention : 10 years
Industrial Temperature : -40°C ~ 85°C
Support Common Flash Memory Interface
Low Vcc Write Inhibit
Package : 44 - ball FBGA Type, 7.5X5.0mm
0.5 mm ball pitch
1.0 mm (Max.) Thickness
FLASH MEMORY
GENERAL DESCRIPTION
The K8S3215E featuring single 1.8V power supply is a 32Mbit
Muxed Burst Multi Bank Flash Memory organized as 4Mx16.
The memory architecture of the device is designed to divide its
memory arrays into 71 blocks with independent hardware pro-
tection. This block architecture provides highly flexible erase
and program capability. The K8S3215E NOR Flash consists of
sixteen banks. This device is capable of reading data from one
bank while programming or erasing in the other bank.
Regarding read access time, at 54MHz, the K8S3215E pro-
vides a burst access of 14.5ns with initial access times of
88.5ns at 30pF. The device performs a program operation in
units of 16 bits (Word) and erases in units of a block. Single or
multiple blocks can be erased. The block erase operation is
completed within typically 0.7 sec. The device requires 15mA
as program/erase current in the extended temperature ranges.
The K8S3215E NOR Flash Memory is created by using Sam-
sung's advanced CMOS process technology. This device is
available in 44 ball FBGA package.
32M Bit (2M x16) Muxed Burst , Multi Bank NOR Flash Memory
PIN DESCRIPTION
Pin Name
A16 - A20
Pin Function
Address Inputs
A/DQ0 - A/DQ15 Multiplexed Address/Data input/output
CE
OE
RESET
V
PP
WE
WP
CLK
RDY
AVD
Vcc
V
SS
Chip Enable
Output Enable
Hardware Reset Pin
Accelerates Programming
Write Enable
Hardware Write Protection Input
Clock
Ready Output
Address Valid Input
Power Supply
Ground
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 1.0
March, 2005
K8S3215ETD
44 Ball FBGA TOP VIEW (BALL DOWN)
FLASH MEMORY
1
2
3
4
5
6
7
8
9
10
A
RDY
NC
V
SS
CLK
V
CC
WE
V
PP
A19
A17
NC
B
V
CC
A16
A20
AVD
NC
RESET
WP
A18
CE
V
SS
C
V
SS
A/DQ7
A/DQ6
A/DQ13
A/DQ12
A/DQ3
A/DQ2
A/DQ9
A/DQ8
OE
D
A/DQ15
A/DQ14
V
SS
A/DQ5
A/DQ4
A/DQ11
A/DQ10
V
CC
A/DQ1
A/DQ0
FUNCTIONAL BLOCK DIAGRAM
Bank 0
Address
Vcc
Vss
Vpp
CLK
CE
OE
WE
WP
RESET
RDY
AVD
I/O
Interface
&
Bank
Control
Bank 1
Address
X
Dec
Bank 0
Cell Array
Y Dec
Latch &
Control
Y Dec
X
Dec
Bank 1
Cell Array
Latch &
Control
Bank 15
Address
X
Dec
Bank 15
Cell Array
Y Dec
A16~A20
A/DQ0~
A/DQ15
Erase
Control
Block
Inform
Program
Control
Latch &
Control
High
Voltage
Gen.
3
Revision 1.0
March, 2005
K8S3215ETD
ORDERING INFORMATION
FLASH MEMORY
K 8 S 32 1 5 E T D - F I 7B
Samsung
NOR Flash Memory
Device Type
Multiplexed Burst
Access Time
Refer to Table 1
Operating Temperature Range
C = Commercial Temp. (0
°C
to 70
°C)
I = Industrial Temp. (-40
°C
to 85
°C)
Package
F : FBGA
D : FBGA(Lead Free)
Version
5th Generation
Block Architecture
T = Top Boot Block
Density
32Mbits
Organization
x16 Organization
Operating Voltage Range
1.7 V to 1.95V
Table 1. PRODUCT LINE-UP
K8S3215E
Synchronous/Burst
Speed Option
Max. Initial Access Time (t
IAA,
ns)
V
CC
=1.7V-1.95V Max. Burst Access Time (t
BA,
ns)
Max. OE Access Time (t
OE,
ns)
7B
(54MHz)
88.5
14.5
20
Asynchronous
Speed Option
Max Access Time (t
AA,
ns)
Max CE Access Time (t
CE,
ns)
Max OE Access Time (t
OE,
ns)
7B
(54MHz)
90
90
20
Table 2. K8S3215E DEVICE BANK DIVISIONS
Bank 0
Mbit
2 Mbit
Block Sizes
Eight 4Kwords,
Three 32Kwords
Mbit
30 Mbit
Bank 1 ~ Bank 15
Block Sizes
Sixty 32Kwords
4
Revision 1.0
March, 2005
K8S3215ETD
Table 3. Block Address Table
Bank
Block
BA70
BA69
BA68
BA67
BA66
Bank0
BA65
BA64
BA63
BA62
BA61
BA60
BA59
Bank1
BA58
BA57
BA56
BA55
Bank2
BA54
BA53
BA52
BA51
Bank3
BA50
BA49
BA48
BA47
Bank4
BA46
BA45
BA44
Block Size
4 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
4 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
32 Kwords
FLASH MEMORY
(x16) Address Range
1FF000h-1FFFFFh
1FE000h-1FEFFFh
1FD000h-1FDFFFh
1FC000h-1FCFFFh
1FB000h-1FBFFFh
1FA000h-1FAFFFh
1F9000h-1F9FFFh
1F8000h-1F8FFFh
1F0000h-1F7FFFh
1E8000h-1EFFFFh
1E0000h-1E7FFFh
1D8000h-1DFFFFh
1D0000h-1D7FFFh
1C8000h-1CFFFFh
1C0000h-1C7FFFh
1B8000h-1BFFFFh
1B0000h-1B7FFFh
1A8000h-1AFFFFh
1A0000h-1A7FFFh
198000h-19FFFFh
190000h-197FFFh
188000h-18FFFFh
180000h-187FFFh
178000h-17FFFFh
170000h-177FFFh
168000h-16FFFFh
160000h-167FFFh
5
Revision 1.0
March, 2005

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Description Flash, 2MX16, 90ns, PBGA44, 7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-44 Flash, 2MX16, 90ns, PBGA44, 7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-44 Flash, 2MX16, 90ns, PBGA44, 7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-44 Flash, 2MX16, 90ns, PBGA44, 7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-44
Is it Rohs certified? conform to conform to incompatible incompatible
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code BGA BGA BGA BGA
package instruction 7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, LEAD FREE, FBGA-44 VFBGA, BGA44,8X14,20 VFBGA, BGA44,8X14,20 7.50 X 5 MM, 1 MM HEIGHT, 0.50 MM PITCH, FBGA-44
Contacts 44 44 44 44
Reach Compliance Code compliant compliant compliant compliant
ECCN code 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A
Maximum access time 90 ns 90 ns 90 ns 90 ns
Other features SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup block TOP TOP TOP TOP
JESD-30 code R-PBGA-B44 R-PBGA-B44 R-PBGA-B44 R-PBGA-B44
JESD-609 code e1 e1 e0 e0
length 7.5 mm 7.5 mm 7.5 mm 7.5 mm
memory density 33554432 bit 33554432 bit 33554432 bit 33554432 bit
Memory IC Type FLASH FLASH FLASH FLASH
memory width 16 16 16 16
Number of functions 1 1 1 1
Number of terminals 44 44 44 44
word count 2097152 words 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000 2000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 85 °C 85 °C 70 °C
organize 2MX16 2MX16 2MX16 2MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code VFBGA VFBGA VFBGA VFBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 240 240
Programming voltage 1.8 V 1.8 V 1.8 V 1.8 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1 mm 1 mm 1 mm 1 mm
Maximum supply voltage (Vsup) 1.95 V 1.95 V 1.95 V 1.95 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL
Terminal surface TIN SILVER COPPER TIN SILVER COPPER TIN LEAD TIN LEAD
Terminal form BALL BALL BALL BALL
Terminal pitch 0.5 mm 0.5 mm 0.5 mm 0.5 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40 30 30
type NOR TYPE NOR TYPE NOR TYPE NOR TYPE
width 5 mm 5 mm 5 mm 5 mm
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