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K4Q160411C-FL50

Description
EDO DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28
Categorystorage    storage   
File Size401KB,20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4Q160411C-FL50 Overview

EDO DRAM, 4MX4, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28

K4Q160411C-FL50 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP
package instructionTSOP2, TSOP28,.34
Contacts28
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time50 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-G28
JESD-609 codee0
length18.41 mm
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals28
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP28,.34
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle2048
Maximum seat height1.2 mm
self refreshYES
Maximum standby current0.00025 A
Maximum slew rate0.11 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm
K4Q170411C, K4Q160411C
CMOS DRAM
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 4 bit Quad CAS with Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high
speed random access of memory cells within the same row, so called Hyper Page Mode. Refresh cycle (2K Ref. or 4K Ref.), access
time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of
this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is avail-
able in L-version. Four separate CAS pins provide for seperate I/O operation allowing this device to operate in parity mode.
This 4Mx4 Extended Data Out Quad CAS DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-
width, low power consumption and high reliability.
FEATURES
Part Identification
- K4Q170411C-B(F) (5V, 4K Ref.)
- K4Q160411C-B(F) (5V, 2K Ref.)
• Extended Data Out mode operation
(Fast Page Mode with Extended Data Out)
• Four separate CAS pins provide for separate I/O operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
Unit : mW
• TTL compatible inputs and outputs
• Early Write or output enable controlled write
2K
605
550
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• Single +5V±10% power supply
Active Power Dissipation
Refresh Cycle
4K
-50
-60
495
440
Speed
FUNCTIONAL BLOCK DIAGRAM
Refresh Cycles
Part
NO.
K4Q170411C
K4Q160411C
Refresh
cycle
4K
2K
Refresh period
Normal
64ms
32ms
Refresh Timer
Refresh Control
Row Decoder
Sense Amps & I/O
RAS
CAS0 - 3
W
Control
Clocks
Vcc
Vss
L-ver
128ms
VBB Generator
Data in
Buffer
Performance Range
Speed
-50
-60
Refresh Counter
Memory Array
4,194,304 x 4
Cells
DQ0
to
DQ3
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
84ns
104ns
t
HPC
20ns
25ns
A0-A11
(A0 - A10)
*1
A0 - A9
(A0 - A10)
*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Data out
Buffer
OE
Note)
*1
: 2K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
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