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MT47H64M16HR-3 IT:H

Description
IC 64M X 16 DDR DRAM, 0.45 ns, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84, Dynamic RAM
Categorystorage    storage   
File Size9MB,131 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
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MT47H64M16HR-3 IT:H Overview

IC 64M X 16 DDR DRAM, 0.45 ns, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84, Dynamic RAM

MT47H64M16HR-3 IT:H Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
package instructionTFBGA, BGA84,9X15,32
Reach Compliance Codeunknown
ECCN code3A991
access modeMULTI BANK PAGE BURST
Maximum access time0.45 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)333 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B84
JESD-609 codee1
length12.5 mm
memory density1073741824 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals84
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA84,9X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.007 A
Maximum slew rate0.23 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm
1Gb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
V
DD
= +1.8V ±0.1V, V
DDQ
= +1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
RoHS-compliant
Supports JEDEC clock jitter specification
Options
1
Configuration
256 Meg x 4 (32 Meg x 4 x 8 banks)
128 Meg x 8 (16 Meg x 8 x 8 banks)
64 Meg x 16 (8 Meg x 16 x 8 banks)
FBGA package (Pb-free) – x16
84-ball FBGA (8mm x 12.5mm)
Rev. G, H
FBGA package (Pb-free) – x4, x8
60-ball FBGA (8mm x 11.5mm)
Rev. G
FBGA package (Pb-free) – x4, x8
60-ball FBGA (8mm x 10mm) Rev. H
FBGA package (lead solder) – x16
84-ball FBGA (8mm x 12.5mm)
Rev. G, H
FBGA package (lead solder) – x4, x8
60-ball FBGA (8mm x 11.5mm)
Rev. G
FBGA package (lead solder) – x4, x8
60-ball FBGA (8mm x 10mm) Rev. H
Timing – cycle time
1.875ns @ CL = 7 (DDR2-1066)
2.5ns @ CL = 5 (DDR2-800)
2.5ns @ CL = 6 (DDR2-800)
3.0ns @ CL = 4 (DDR2-667)
3.0ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)
Self refresh
Standard
Low-power
Operating temperature
Commercial (0°C
T
C
85°C)
Industrial (–40°C
T
C
95°C;
–40°C
T
A
85°C)
Automotive (–40°C
T
C
, T
A
105ºC)
Revision
Note:
Marking
256M4
128M8
64M16
HR
HQ
CF
HW
HV
JN
-187E
-25E
-25
-3E
-3
-37E
None
L
None
IT
AT
:G/:H
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on
www.micron.com
for
product offerings and availability.
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2004 Micron Technology, Inc. All rights reserved.

MT47H64M16HR-3 IT:H Related Products

MT47H64M16HR-3 IT:H MT47H64M16BT-37E MT47H128M8BT-5E MT47H256M4BT-5E MT47H256M4BT-37E MT47H128M8BT-37E MT47H64M16HR-25E MT47H64M16HR-3 MT47H64M16BT-5E
Description IC 64M X 16 DDR DRAM, 0.45 ns, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84, Dynamic RAM DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92 DDR DRAM, 128MX8, 0.6ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92 DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92 DDR DRAM, 256MX4, 0.5ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92 DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92 DDR DRAM, DDR DRAM, DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown compliant unknow
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
Maker Micron Technology Micron Technology Micron Technology Micron Technology - Micron Technology Micron Technology Micron Technology Micron Technology
package instruction TFBGA, BGA84,9X15,32 TFBGA, BGA92,9X21,32 TFBGA, BGA92,9X21,32 TFBGA, BGA92,9X21,32 TFBGA, BGA92,9X21,32 TFBGA, BGA92,9X21,32 - - TFBGA, BGA92,9X21,32
ECCN code 3A991 EAR99 EAR99 EAR99 EAR99 EAR99 - - EAR99
access mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST - - MULTI BANK PAGE BURST
Maximum access time 0.45 ns 0.5 ns 0.6 ns 0.6 ns 0.5 ns 0.5 ns - - 0.6 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH - - AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 333 MHz 267 MHz 200 MHz 200 MHz 267 MHz 267 MHz - - 200 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON - - COMMON
interleaved burst length 4,8 4,8 4,8 4,8 4,8 4,8 - - 4,8
JESD-30 code R-PBGA-B84 R-PBGA-B92 R-PBGA-B92 R-PBGA-B92 R-PBGA-B92 R-PBGA-B92 - - R-PBGA-B92
JESD-609 code e1 e1 e1 e1 e1 e1 - - e1
length 12.5 mm 19 mm 19 mm 19 mm 19 mm 19 mm - - 19 mm
memory density 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit - - 1073741824 bi
memory width 16 16 8 4 4 8 - - 16
Number of functions 1 1 1 1 1 1 - - 1
Number of ports 1 1 1 1 1 1 - - 1
Number of terminals 84 92 92 92 92 92 - - 92
word count 67108864 words 67108864 words 134217728 words 268435456 words 268435456 words 134217728 words - - 67108864 words
character code 64000000 64000000 128000000 256000000 256000000 128000000 - - 64000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS - - SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C - - 85 °C
organize 64MX16 64MX16 128MX8 256MX4 256MX4 128MX8 - - 64MX16
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE - - 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY
encapsulated code TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA - - TFBGA
Encapsulate equivalent code BGA84,9X15,32 BGA92,9X21,32 BGA92,9X21,32 BGA92,9X21,32 BGA92,9X21,32 BGA92,9X21,32 - - BGA92,9X21,32
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - - RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH - - GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 - NOT SPECIFIED 260
power supply 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V - - 1.8 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - - Not Qualified
refresh cycle 8192 8192 8192 8192 8192 8192 - - 8192
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm - - 1.2 mm
self refresh YES YES YES YES YES YES - - YES
Continuous burst length 4,8 4,8 4,8 4,8 4,8 4,8 - - 4,8
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V - - 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V - - 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V - - 1.8 V
surface mount YES YES YES YES YES YES - - YES
technology CMOS CMOS CMOS CMOS CMOS CMOS - - CMOS
Temperature level INDUSTRIAL OTHER OTHER OTHER OTHER OTHER - - OTHER
Terminal surface Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) - - Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form BALL BALL BALL BALL BALL BALL - - BALL
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm - - 0.8 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM - - BOTTOM
Maximum time at peak reflow temperature 30 30 30 30 30 30 - NOT SPECIFIED 30
width 8 mm 11 mm 11 mm 11 mm 11 mm 11 mm - - 11 mm
Parts packaging code - BGA BGA BGA BGA BGA - - BGA
Contacts - 92 92 92 92 92 - - 92
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