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MT47H64M16HR-25E

Description
DDR DRAM,
Categorystorage    storage   
File Size9MB,131 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT47H64M16HR-25E Overview

DDR DRAM,

MT47H64M16HR-25E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Reach Compliance Codeunknown
Memory IC TypeDDR DRAM
1Gb: x4, x8, x16 DDR2 SDRAM
Features
DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
V
DD
= +1.8V ±0.1V, V
DDQ
= +1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1
t
CK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
RoHS-compliant
Supports JEDEC clock jitter specification
Options
1
Configuration
256 Meg x 4 (32 Meg x 4 x 8 banks)
128 Meg x 8 (16 Meg x 8 x 8 banks)
64 Meg x 16 (8 Meg x 16 x 8 banks)
FBGA package (Pb-free) – x16
84-ball FBGA (8mm x 12.5mm)
Rev. G, H
FBGA package (Pb-free) – x4, x8
60-ball FBGA (8mm x 11.5mm)
Rev. G
FBGA package (Pb-free) – x4, x8
60-ball FBGA (8mm x 10mm) Rev. H
FBGA package (lead solder) – x16
84-ball FBGA (8mm x 12.5mm)
Rev. G, H
FBGA package (lead solder) – x4, x8
60-ball FBGA (8mm x 11.5mm)
Rev. G
FBGA package (lead solder) – x4, x8
60-ball FBGA (8mm x 10mm) Rev. H
Timing – cycle time
1.875ns @ CL = 7 (DDR2-1066)
2.5ns @ CL = 5 (DDR2-800)
2.5ns @ CL = 6 (DDR2-800)
3.0ns @ CL = 4 (DDR2-667)
3.0ns @ CL = 5 (DDR2-667)
3.75ns @ CL = 4 (DDR2-533)
Self refresh
Standard
Low-power
Operating temperature
Commercial (0°C
T
C
85°C)
Industrial (–40°C
T
C
95°C;
–40°C
T
A
85°C)
Automotive (–40°C
T
C
, T
A
105ºC)
Revision
Note:
Marking
256M4
128M8
64M16
HR
HQ
CF
HW
HV
JN
-187E
-25E
-25
-3E
-3
-37E
None
L
None
IT
AT
:G/:H
1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on
www.micron.com
for
product offerings and availability.
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2004 Micron Technology, Inc. All rights reserved.

MT47H64M16HR-25E Related Products

MT47H64M16HR-25E MT47H64M16BT-37E MT47H128M8BT-5E MT47H256M4BT-5E MT47H256M4BT-37E MT47H64M16HR-3 IT:H MT47H128M8BT-37E MT47H64M16HR-3 MT47H64M16BT-5E
Description DDR DRAM, DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92 DDR DRAM, 128MX8, 0.6ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92 DDR DRAM, 256MX4, 0.6ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92 DDR DRAM, 256MX4, 0.5ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92 IC 64M X 16 DDR DRAM, 0.45 ns, PBGA84, 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84, Dynamic RAM DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92 DDR DRAM, DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA92, 11 X 19 MM, LEAD FREE, FBGA-92
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown compliant unknow
Memory IC Type DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM DDR DRAM
Maker Micron Technology Micron Technology Micron Technology Micron Technology - Micron Technology Micron Technology Micron Technology Micron Technology
Parts packaging code - BGA BGA BGA BGA - BGA - BGA
package instruction - TFBGA, BGA92,9X21,32 TFBGA, BGA92,9X21,32 TFBGA, BGA92,9X21,32 TFBGA, BGA92,9X21,32 TFBGA, BGA84,9X15,32 TFBGA, BGA92,9X21,32 - TFBGA, BGA92,9X21,32
Contacts - 92 92 92 92 - 92 - 92
ECCN code - EAR99 EAR99 EAR99 EAR99 3A991 EAR99 - EAR99
access mode - MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST MULTI BANK PAGE BURST - MULTI BANK PAGE BURST
Maximum access time - 0.5 ns 0.6 ns 0.6 ns 0.5 ns 0.45 ns 0.5 ns - 0.6 ns
Other features - AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH - AUTO/SELF REFRESH
Maximum clock frequency (fCLK) - 267 MHz 200 MHz 200 MHz 267 MHz 333 MHz 267 MHz - 200 MHz
I/O type - COMMON COMMON COMMON COMMON COMMON COMMON - COMMON
interleaved burst length - 4,8 4,8 4,8 4,8 4,8 4,8 - 4,8
JESD-30 code - R-PBGA-B92 R-PBGA-B92 R-PBGA-B92 R-PBGA-B92 R-PBGA-B84 R-PBGA-B92 - R-PBGA-B92
JESD-609 code - e1 e1 e1 e1 e1 e1 - e1
length - 19 mm 19 mm 19 mm 19 mm 12.5 mm 19 mm - 19 mm
memory density - 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit 1073741824 bit - 1073741824 bi
memory width - 16 8 4 4 16 8 - 16
Number of functions - 1 1 1 1 1 1 - 1
Number of ports - 1 1 1 1 1 1 - 1
Number of terminals - 92 92 92 92 84 92 - 92
word count - 67108864 words 134217728 words 268435456 words 268435456 words 67108864 words 134217728 words - 67108864 words
character code - 64000000 128000000 256000000 256000000 64000000 128000000 - 64000000
Operating mode - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS
Maximum operating temperature - 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C - 85 °C
organize - 64MX16 128MX8 256MX4 256MX4 64MX16 128MX8 - 64MX16
Output characteristics - 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE - 3-STATE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
encapsulated code - TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA - TFBGA
Encapsulate equivalent code - BGA92,9X21,32 BGA92,9X21,32 BGA92,9X21,32 BGA92,9X21,32 BGA84,9X15,32 BGA92,9X21,32 - BGA92,9X21,32
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
Package form - GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH - GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) - 260 260 260 260 260 260 NOT SPECIFIED 260
power supply - 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V - 1.8 V
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
refresh cycle - 8192 8192 8192 8192 8192 8192 - 8192
Maximum seat height - 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm - 1.2 mm
self refresh - YES YES YES YES YES YES - YES
Continuous burst length - 4,8 4,8 4,8 4,8 4,8 4,8 - 4,8
Maximum supply voltage (Vsup) - 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V 1.9 V - 1.9 V
Minimum supply voltage (Vsup) - 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V - 1.7 V
Nominal supply voltage (Vsup) - 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V - 1.8 V
surface mount - YES YES YES YES YES YES - YES
technology - CMOS CMOS CMOS CMOS CMOS CMOS - CMOS
Temperature level - OTHER OTHER OTHER OTHER INDUSTRIAL OTHER - OTHER
Terminal surface - Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) Tin/Silver/Copper (Sn/Ag/Cu) - Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form - BALL BALL BALL BALL BALL BALL - BALL
Terminal pitch - 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm - 0.8 mm
Terminal location - BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM - BOTTOM
Maximum time at peak reflow temperature - 30 30 30 30 30 30 NOT SPECIFIED 30
width - 11 mm 11 mm 11 mm 11 mm 8 mm 11 mm - 11 mm
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