KM616V1000B, KM616U1000B Family
Document Title
64K x16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
0.1
1.0
History
Design target
Initial draft
Draft Data
July 24, 1995
August 12, 1995
Remark
Advance
Preliminary
Final
Finalize
April 13, 1996
- One datasheet for commercial and industrial part and 3.0, 3.3V prod-
uct.
Revised
- Change datasheet format.
- Remove Icc write current value.
- Remove low power product from TSOP package
- Remove 100ns part from KM616V1000B Family
- Remove Extended product
Errata correction
February 25, 1998
2.0
Final
2.01
August 13, 1998
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0
February 1998
KM616V1000B, KM616U1000B Family
64K x16 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
•
Process Technology : Poly Load
•
Organization : 64K x16
•
Data Byte Control : LB=I/O
1
~
8
, UB=I/O
9
~
16
•
Power Supply Voltage :
KM616V1000B family : 3.0~3.6V
KM616U1000B family : 2.7~3.3V
•
Low Data Retention Voltage : 2V(Min)
•
Three state output and TTL Compatible
•
Package Type :44-TSOP2-400F/R
CMOS SRAM
GENERAL DESCRIPTION
The KM616V1000B and KM616U1000B families are fabri-
cated by SAMSUNG′s advanced CMOS process technology.
The families support various operating temperature ranges
and have small package types for user flexibility of system
design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Standby
(I
SB1
, Max)
Operating
(Icc
2
, Max
)
PKG Type
KM616V1000BL-L
KM616U1000BL-L
KM616V1000BLI-L
KM616U1000BLI-L
Commercial(0~70°C)
Industrial(-40~85°C)
3.0~3.6V
2.7~3.3V
3.0~3.6V
2.7~3.3V
70
1)
100
85
1)
100
15µA
15µA
20µA
20µA
65mA
44-TSOP2
Forward/Reverse
1. The parameter is measured with 30pF test load.
PIN DESCRIPTION
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
A9
A10
A11
N.C
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
N.C
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
A0
A1
A2
A3
A4
A5
A6
A7
A8
A15
I/O
1
~I/O
8
Precharge circuit.
Vcc
Vss
Memory array
1024 rows
64×16 columns
Row
select
44-TSOP2
Forward
44-TSOP2
Reverse
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
I/O
9
~I/O
16
Name
CS
OE
WE
LB
UB
Function
Chip Select Input
Output Enable Input
Write Enable Input
Lower Byte (I/O
1~8
)
Upper Byte(I/O
9~16
)
Name
Vcc
Vss
Function
Power
Ground
WE
OE
UB
LB
CS
A9 A10 A11 A12 A13 A14
I/O
1
~
16
Data Inputs/Outputs
A
0
~A
15
Address Inputs
N.C
No Connection
Control
logic
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
2
Revision 2.0
February 1998
KM616V1000B, KM616U1000B Family
PRODUCT LIST
Commercial Temperature Products(0~70°C)
Part Name
KM616V1000BLT-7L
KM616U1000BLT-10L
KM616V1000BLR-7L
KM616U1000BLR-10L
CMOS SRAM
Industrial Temperature Products(-40~85°C)
Function
44-TSOP-2F, 3.3V, 70ns, LL
44-TSOP-2F, 3.0V, 100ns, LL
44-TSOP-2R, 3.3V, 70ns, LL
44-TSOP-2R, 3.0V, 100ns, LL
Part Name
KM616V1000BLTI-8L
KM616U1000BLTI-10L
KM616V1000BLRI-8L
KM616U1000BLRI-10L
Function
44-TSOP-2F, 3.3V, 85ns, LL
44-TSOP-2F, 3.0V, 100ns, LL
44-TSOP-2R, 3.3V, 85ns, LL
44-TSOP-2R, 3.0V, 100ns, LL
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
L
L
L
L
L
OE
X
1)
H
X
1)
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
H
X
1)
H
H
H
L
L
L
LB
X
1)
X
1)
H
L
H
L
L
H
L
UB
X
1)
X
1)
H
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care. (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Symbol
V
IN
,V
OUT
V
CC
P
D
T
STG
Ratings
-0.5 to Vcc+0.5
-0.5 to 4.6
1.0
-65 to 150
0 to 70
Operating Temperature
T
A
-40 to 85
Soldering temperature and time
T
SOLDER
260°C, 10sec (Lead Only)
°C
-
Unit
V
V
W
°C
°C
Remark
-
-
-
-
KM616V1000BL-L
KM616U1000BL-L
KM616V1000BLI-L
KM616U1000BLI-L
-
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 2.0
February 1998
KM616V1000B, KM616U1000B Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Product
KM616V1000B Family
KM616U1000B Family
All Family
KM616V1000B, KM616U1000B Family
KM616V1000B, KM616U1000B Family
Min
3.0
2.7
0
2.2
-0.3
3)
Typ
3.3
3.0
0
-
-
CMOS SRAM
Max
3.6
3.3
0
V
CC
+0.3
2)
0.4
Unit
V
V
V
V
Note:
1. Commercial Product : T
A
=0 to 70°C, otherwise specified
Industrial Product : T
A
=-40 to 85°C, otherwise specified
2. Overshoot : V
CC
+3.0V in case of pulse width
≤
30ns
3. Undershoot : -3.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
6
8
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Symbol
I
LI
I
LO
I
CC
I
CC1
1)
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby current(CMOS)
V
OL
V
OH
I
SB
I
SB1
V
IN
=V
SS
to V
CC
CS=V
IH
or OE=V
IH
or WE=V
IL,
V
IO
=V
SS
to V
CC
Test Conditions
Min
-1
-1
-
Read
Write
-
-
-
-
2.2
-
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
1
1
10
15
40
65
0.4
-
0.5
15
2)
Unit
µA
µA
mA
mA
mA
V
V
mA
µA
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH,
Read
Cycle time=1µs, 100% duty, I
IO
=0mA
CS≤0.2V, V
IN
≤0.2V
or V
IN
≥Vcc-0.2V
Average operating current
Cycle time=Min, 100% duty, I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
I
OL
=2.1mA
I
OH
=-1.0mA
CS=V
IH
, Other inputs=V
IL
or V
IH
CS≥V
CC
-0.2V, Other inputs=0∼V
CC
1. Industrial Product : I
CC1
(Read/Write)=20mA/45mA
2. Industrial Product=20µA
4
Revision 2.0
February 1998
KM616V1000B, KM616U1000B Family
AC OPERATING CONDITIONS
TEST CONDITIONS
( Test Load and Input/Output Reference)
Input pulse level : 0.4 to 2.2V
Input rising and falling time : 5ns
Input and output reference voltage :1.5V
Output load(see right) : C
L
=100pF+1TTL
C
L
=30pF+1TTL
C
L
1)
CMOS SRAM
1. Including scope and jig capacitance
AC CHARACTERISTICS
(KM616V1000B Family : Vcc=3.0~3.6V, KM616U1000B Family : Vcc=2.7~3.3V
Commercial product : T
A
=0 to70°C, Industrial product :T
A
=-40 to 85°C)
Speed Bins
Parameter List
Symbol
Min
Read cycle time
Address access time
Chip select to output
Output enable to valid output
UB,LB Access Time
Read
Chip select to low-Z output
Output enable to low-Z output
UB,LB enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
UB,LB disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write
UB, LB valid to end of write
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
t
RC
t
AA
t
CO
t
OE
t
BA
t
LZ
t
OLZ
t
BLZ
t
HZ
t
OHZ
t
BHZ
t
OH
t
WC
t
CW
t
AS
t
AW
t
WP
t
BW
t
WR
t
WHZ
t
DW
t
DH
t
OW
70
-
-
-
-
10
5
5
0
0
0
10
70
60
0
60
50
60
0
0
30
0
5
70ns
Max
-
70
70
35
35
-
-
-
25
25
25
-
-
-
-
-
-
-
-
30
-
-
-
Min
85
-
-
-
-
10
5
5
0
0
0
10
85
70
0
70
60
70
0
0
35
0
5
85ns
Max
-
85
85
40
40
-
-
-
25
25
25
-
-
-
-
-
-
-
-
30
-
-
-
100ns
Min
100
-
-
-
-
10
5
5
0
0
0
15
100
80
0
80
70
80
0
0
40
0
5
Max
-
100
100
50
50
-
-
-
30
30
30
-
-
-
-
-
-
-
-
35
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
DATA RETENTION CHARACTERISTICS
Item
V
CC
for data retention
Data retention current
Data retention set-up time
Recovery time
1. Industrial product=20µA
Symbol
V
DR
I
DR
t
SDR
t
RDR
Test Condition
CS≥Vcc-0.2V
V
CC
=3.0V,
CS≥Vcc-0.2V
See data retention waveform
Min
2.0
-
0
5
Typ
-
-
-
-
Max
3.6
15
1)
-
-
Unit
V
µA
ms
5
Revision 2.0
February 1998
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