UBCP53-16 datasheet, PDF - EEWORLD Datasheet

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UBCP53-16: DescriptionPower Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size43KB，1 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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UBCP53-16 Overview

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

UBCP53-16 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	not_compliant
Shell connection	COLLECTOR
Configuration	SINGLE
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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SOT223 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 AUGUST 1995

7

FEATURES

* Suitable for AF drivers and output stages

* High collector current and Low V

CE(sat)

COMPLEMENTARY TYPE

PARTMARKING DETAILS

BCP56

BCP53

BCP53 10

BCP53 16

C

BCP53

E

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature

Range

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter Turn-On

Voltage

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

MIN.

-100

-80

-5

-100

-20

-10

-0.5

-1.0

40

25

63

100

250

100

160

125

160

250

MHz

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

-100

-80

-5

-1.5

-1

2

-55 to +150

UNIT

V

A

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

TYP.

MAX.

UNIT

V

nA

CONDITIONS.

I

C

=-100

µ

A

I

C

=- 10mA *

I

E

=-10

µ

A

V

CB

=-30V

V

CB

=-30V, T

amb

=150°C

V

EB

=-5V

I

C

=-500mA, I

B

=-50mA*

I

C

=-500mA, V

CE

=-2V*

I

C

=-150mA,

I

C

=-500mA,

I

C

=-150mA,

I

C

=-150mA,

V

CE

=-2V*

V

CE

=-2V*

V

CE

=-2V*

V

CE

=-2V*

µ

A

µ

A

Emitter Cut-Off Current I

EBO

V

CE(sat)

V

BE(on)

V

Static Forward Current h

FE

Transfer Ratio

BCP53-10

BCP53-16

Transition Frequency

f

T

I

C

=-50mA, V

CE

=-10V,

f=100MHz

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

3 - 15

UBCP53-16 Related Products

	UBCP53-16
Description	Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	not_compliant
Shell connection	COLLECTOR
Configuration	SINGLE
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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