CGP30 & DGP30
Vishay General Semiconductor
Clamper/Damper Glass Passivated Rectifier
FEATURES
®
• Superectifier structure
• Cavity-free glass-passivated junction
• Low forward voltage drop
ted*
aten
P
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly by
Patent No. 3,930,306
• Typical I
R
less than 0.1 µA
• High forward surge capability
DO-201AD
• Meets environmental standard MIL-S-19500
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high voltage rectification of power supplies,
inverters, converters and freewheeling diodes
specially designed for clamping circuits, horizontal
deflection systems and damper applications.
MECHANICAL DATA
Case:
DO-201AD, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
3.0 A
1400 V, 1500 V
100 A
5.0 µA
1.2 V
175 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 0.375" (9.5 mm)
lead lengths at T
A
= 50 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum full load reverse current, full cycle average
0.375" (9.5 mm) lead length at T
A
= 70 °C
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
T
J
, T
STG
CGP30
1400
980
1400
3.0
100
200
- 65 to + 175
DGP30
1500
1050
1500
UNIT
V
V
V
A
A
µA
°C
Document Number: 88569
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
CGP30 & DGP30
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
(1)
Maximum reverse current
Maximum reverse recovery time
Reverse recovery time
Typical junction capacitance
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
TEST CONDITIONS
I
F
= 3.0 A
rated V
R
I
F
= 0.5 A, I
R
= 50 mA
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
typical
maximum
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
F
I
R
t
rr
t
rr
C
J
15
1.0
2.0
40
CGP30
1.2
5.0
100
20
DGP30
UNIT
V
µA
µs
µs
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
(1)
Note:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, with leads attached to heat sink
SYMBOL
R
θJA
CGP30
20
DGP30
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
CGP30-E3/54
CGP30-E3/73
UNIT WEIGHT (g)
1.28
1.28
PREFERRED PACKAGE CODE
54
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
4.0
1000
Average Forward Rectified Current (A)
3.0
Peak Forward Surge Current (A)
60 Hz
Resistive or
Inductive Load
T
A
= 50 °C
8.3
ms Single Half Sine-Wave
(JEDEC Method)
2.0
100
1.0
0.375" (9.5 mm) Lead Length
0
0
25
50
75
100
125
150
175
10
1
10
100
Ambient Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88569
Revision: 26-May-08
CGP30 & DGP30
Vishay General Semiconductor
100
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
1
0.1
T
J
= 25 °C
Pulse
Width
= 300
µs
1
%
Duty Cycle
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Junction Capacitance (pF)
10
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
Instantaneous Reverse Current (µA)
T
J
= 100 °C
1
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Characteristics
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Document Number: 88569
Revision: 26-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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