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SF8GZ47

Description
toshiba thyrisitor silicon planar type
File Size245KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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SF8GZ47 Overview

toshiba thyrisitor silicon planar type

SF8GZ47,SF8JZ47
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF8GZ47,SF8JZ47
MEDIUM POWER CONTROL APPLICATIONS
l
Repetitive Peak off−State Voltage
Repetitive Peak Reverse Voltage
l
Average On−State Current
l
Isolation Voltage
: V
DRM
= 400, 600V
: V
RRM
= 400, 600V
: I
T (AV)
= 8A
: V
Isol
=
1500V
AC
Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off−State Voltage
and Repetitive Peak6
Reverse Voltage
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive <5ms,
T
j
= 0~125°C)
SF8GZ47
SF8JZ47
SF8GZ47
SF8JZ47
V
RSM
SYMBOL
V
DRM
V
RRM
RATING
400
600
500
720
8
12.6
120 (50 Hz)
132 (60 Hz)
72
100
5
0.5
10
−5
2
−40~125
−40~125
1500
V
V
UNIT
Average On−State Current
(Half Sine Waveform Tc = 72°C)
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non−Repetitive)
I t Limit Value
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1 min.)
2
I
T (AV)
I
T (RMS)
I
TSM
I t
di / dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
V
ISOL
2
A
A
A
A s
A / µs
W
W
V
V
A
°C
°C
V
2
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
13−10H1B
Note 1: di / dt test condition,
V
DRM
= 0.5 × Rated, I
TM
25A, t
gw
10µs,
t
gr
250ns, i
gp
= I
GT
× 2.0
1
2001-07-13

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