PD- 93758D
IRLMS2002
HEXFET
®
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
2.5V Rated
D
D
G
1
6
A
D
V
DSS
= 20V
2
5
D
S
3
4
R
DS(on)
= 0.030Ω
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6 package with its customized leadframe
produces a HEXFET
power MOSFET with R
DS(on)
60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and R
DS(on)
reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Top View
Micro6
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
20
6.5
5.2
20
2.0
1.3
0.016
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
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01/13/03
IRLMS2002
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
20
–––
–––
–––
0.60
13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.016
–––
–––
–––
–––
–––
–––
–––
–––
15
2.2
3.5
8.5
11
36
16
1310
150
36
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.030
V
GS
= 4.5V, I
D
= 6.5A
Ω
0.045
V
GS
= 2.5V, I
D
= 5.2A
1.2
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 10V, I
D
= 6.5A
1.0
V
DS
= 16V, V
GS
= 0V
µA
25
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
-100
V
GS
= -12V
nA
100
V
GS
= 12V
22
I
D
= 6.5A
3.3
nC V
DS
= 10V
5.3
V
GS
= 5.0V
–––
V
DD
= 10V
–––
I
D
= 1.0A
ns
–––
R
G
= 6.0Ω
–––
R
D
= 10Ω
–––
V
GS
= 0V
–––
pF
V
DS
= 15V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
19
13
2.0
A
20
1.2
29
20
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.7A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t
≤
5sec.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRLMS2002
100
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
TOP
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
TOP
10
10
1.50V
1.50V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
T
J
= 25
°
C
T
J
= 150
°
C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 5.3A
I
D
, Drain-to-Source Current (A)
1.5
1.0
0.5
1
1.5
V DS = 15V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRLMS2002
2000
1600
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
6.5A
I
D
=
5.3A
V
DS
= 10V
8
C, Capacitance (pF)
Ciss
1200
6
800
4
400
2
0
1
Coss
Crss
10
100
0
0
4
8
12
16
20
24
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150
°
C
I
D
, Drain Current (A)
10
1ms
1
T
J
= 25
°
C
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLMS2002
6.0
0.20
5.0
0.10
I
D
, Drain Current (A)
VGS(th) , Variace ( V )
4.0
0.00
Id = 250µA
-0.10
3.0
2.0
-0.20
1.0
-0.30
-0.40
0.0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
C
, Case Temperature ( ° C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Typical Vgs(th) Variance Vs.
Juction Temperature
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Embedded System
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