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Datasheet> All Categories > Analog mixed-signal IC> Trigger device> US112N-4
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US112N-4

Description
Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size197KB，5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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US112N-4 Overview

Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN

US112N-4 Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current15 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current30 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum leakage current2 mA
On-state non-repetitive peak current146 A
Number of components1
Number of terminals3
Maximum on-state current12000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum rms on-state current12 A
Off-state repetitive peak voltage400 V
Repeated peak reverse voltage400 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeSCR

US112N-4 Preview

UTC US112S/N
SCRs
DESCRIPTION
The UTC US112S/N is suitable to fit all modes of
control found in applications such as overvoltage
crowbar protection, motor control circuits in power
tools and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits...
SCR
1
TO-220
1: CATHODE
2: ANODE
3: GATE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak off-state voltages
US112S/N-4
US112S/N-6
US112S/N-8
RMS on-state current (180° conduction angle) (Tc = 105°C)
Average on-state current (180° conduction angle) (Tc = 105°C)
Non repetitive surge peak on-state current (Tj = 25°C)
tp=8.3ms
tp=10ms
I²t Value for fusing (tp = 10 ms, Tj = 25°C)
Critical rate of rise of on-state current
(IG = 2 x IGT , tr
≤
100 n s, F = 60 Hz , Tj = 125°C,)
Peak gate current (tp=20µs, Tj = 125°C)
Maximum peak reverse gate voltage
Average gate power dissipation (Tj = 125°C)
Storage junction temperature range
Operating junction temperature range
V
DRM
V
RRM
I
T(RMS)
I
T(AV)
I
TSM
I²t
dI/dt
I
GM
V
RGM
P
G(AV)
Tstg
Tj
400
600
800
12
8
146
140
98
50
4
5
1
-40 ~ +150
-40 ~ +125
V
A
A
A
A²S
A/µs
A
V
W
°C
°C
SYMBOL
RATING
US112S
US112N
UNIT
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-013,B
UTC US112S/N
UTC US112S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
SCR
TEST CONDITIONS
V
D
= 12 V, R
L
=140
Ω
V
D
= 12 V, R
L
=140
Ω
PARAMETER
Gate trigger Current
Gate trigger Voltage
Gate non-trigger voltage
Reverse gate voltage
Holding Current
Latching Current
Circuit Rate Of Change Of
off-state Voltage
On-state voltage
SYMBOL
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
MIN
MAX.
200
0.8
UNIT
µA
V
V
V
D
= V
DRM,
R
L
= 3.3 kΩ, R
GK
= 1kΩ
Tj = 125°C
I
RG
= 10 µA
I
T
= 50 mA, R
GK
= 1 k
Ω
I
G
= 1 mA ,R
GK
= 1 k
Ω
0.1
8
5
6
5
1.6
0.85
30
5
2
V
mA
mA
V/µs
V
V
mΩ
µA
mA
V
D
= 67 % V
DRM
,
R
GK
= 220
Ω
Tj = 125°C
I
TM
= 24A, t
p
= 380 µs,
Tj = 25°C
Tj = 125°C
Tj = 125°C
Threshold Voltage
Dynamic Resistance
Off-state Leakage Current
V
DRM
= V
RRM,
R
GK
= 220
Ω
Tj = 25°C
Tj = 125°C
UTC US112N(STANDARD) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
Gate trigger Current
Gate trigger Voltage
Gate non-trigger voltage
Holding Current
Latching Current
Circuit Rate Of Change Of
off-state Voltage
On-state voltage
SYMBOL
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
TEST CONDITIONS
V
D
= 12 V, R
L
=33
Ω
V
D
= 12 V, R
L
=33
Ω
MIN
2
MAX.
15
1.3
UNIT
mA
V
V
V
D
= V
DRM,
R
L
= 3.3 kΩ
,
Tj = 125°C
I
T
= 500 mA, Gate open
I
G
= 1.2 I
GT
0.2
30
60
200
1.6
0.85
30
5
2
mA
mA
V/µs
V
V
mΩ
µA
mA
V
D
= 67 % V
DRM
,
Gate open, Tj = 125°C
I
TM
= 24A, t
p
= 380 µs,
Tj = 25°C
Tj = 125°C
Tj = 125°C
Threshold Voltage
Dynamic Resistance
Off-state Leakage Current
V
DRM
= V
RRM,
Tj = 25°C
Tj = 125°C
THERMAL RESISTANCES
PARAMETER
Junction to case (DC)
Junction to ambient
SYMBOL
R
th(j-c)
R
th(j-a)
VALUE
1.3
60
UNIT
KW
K/W
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-013,B
UTC US112S/N
Figure.1:Maximum average power
dissipation vs average on-state current.
14
12
10
SCR
Figure.2:Average and D.C. on-state current
vs case temperature
DC
12
11
10
9
8
7
6
5
4
3
2
1
0
P(W)
IT(av)(A)
α=180°
α=180°
8
6
360°
4
2
IT(av)(A)
0
1
2
3
4
5
6
α
7
8
9
Tcase(℃)
0
0
25
50
75
100
12
5
Fig.3-1:Relative variation of thermal impedance
junction to case vs pulse duration.
K=<Zth(j-c)/Rth(j-c)>
1.00
Fig.3-2:Relative variation of thermal impedance
junction to ambient vs pulseduration (recommended
pad layout,FR4 PC board)
K=<Zth(j-a)/Rth(j-a)>
1.0
0.5
0.10
0.2
0.1
1E-3
tp(s)
1E-2
1E-1
1E+0
0.01
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2
5E+2
Figure.4-1:Relative variation of gate trigger
current,holding current and latching vs
junction temperature (US112S)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
-20
0
20
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
Figure.4-2: Relative variation of gate trigger
current,holding current and latching current vs
junction temperature (US112N).
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.4
2.2
IGT
IH&IL
Rgk=1kΩ
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
60
80
100
120
140
0.0
-40
-20
IGT
IH&IL
Tj(℃)
40
Tj(℃)
0
20
40
60
80
100
120
140
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-013,B
UTC US112S/N
Figure.5:Relative variation of holding current vs
gate-cathode resistance(typical values)
(US112S)
Ta=25℃
10.0
SCR
Fig.6: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values) (US112S)
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
Tj=125℃
VD=0.67* VDRM
IH(Rgk)/IH(Rgk=1kΩ)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
Rgk(kΩ)
1E-1
1E+0
1E+1
0.1
0.0
0.2
Rgk(Ω)
0.4
0.6
0.8
1.0
1.2
1E-2
Fig.7: Relative variation of dV/dt immunity vs gate-
cathode capacitance(typical values) (US112S)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
Cgk(nF)
75
100
125
150
1.0
dV/dt(Cgk)/dV/dt(Rgk=220Ω)
VD=0.67* VDRM
Tj=125℃
Rgk=220Ω
10.0
Fig.8: Surge peak on-state current vs number of cycles
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
Tj=125℃
VD=0.67* VDRM
Rgk(Ω)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Fig.9:Non-repetitive surge peak on-state current for a
sinusoidal pulse with width tp<10ms, and corresponding
2
values of I t.
2000
1000
ITSM(A),I t(A s)
ITSM
Tjinitial=25℃
US112N
dI/dt
limitation
100
US112S
US112N
I t
US112S
tp(ms)
10
0.01
0.10
1.00
10.00
1
0.0
2
2
2
Fig.10: On-state characteristics(maximum values).
200
100
ITSM
Tj=max:
Vto=0.85V
Rd=30mΩ
Tj=Tjmax.
10
Tj=25℃
VTM(V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-013,B
UTC US112S/N
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
5
QW-R301-013,B
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US112N-4 Related Products

US112N-4 US112N-6 US112N-8 US112S-4 US112S-6 US112S-8
Description Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Critical rise rate of minimum off-state voltage 200 V/us 200 V/us 200 V/us 200 V/us 200 V/us 200 V/us
Maximum DC gate trigger current 15 mA 15 mA 15 mA 0.2 mA 0.2 mA 0.2 mA
Maximum DC gate trigger voltage 0.8 V 0.8 V 0.8 V 0.8 V 0.8 V 0.8 V
Maximum holding current 30 mA 30 mA 30 mA 5 mA 5 mA 5 mA
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Maximum leakage current 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA
On-state non-repetitive peak current 146 A 146 A 146 A 146 A 146 A 146 A
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum on-state current 12000 A 12000 A 12000 A 12000 A 12000 A 12000 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum rms on-state current 12 A 12 A 12 A 12 A 12 A 12 A
Off-state repetitive peak voltage 400 V 600 V 800 V 400 V 600 V 800 V
Repeated peak reverse voltage 400 V 600 V 800 V 400 V 600 V 800 V
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Trigger device type SCR SCR SCR SCR SCR SCR

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