datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Analog mixed-signal IC> Trigger device> US112N-8
PDF
Preview

US112N-8

Description
Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
CategoryAnalog mixed-signal IC    Trigger device   
File Size197KB，5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

US112N-8 Overview

Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN

US112N-8 Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger current15 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current30 mA
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum leakage current2 mA
On-state non-repetitive peak current146 A
Number of components1
Number of terminals3
Maximum on-state current12000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum rms on-state current12 A
Off-state repetitive peak voltage800 V
Repeated peak reverse voltage800 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeSCR

US112N-8 Preview

UTC US112S/N
SCRs
DESCRIPTION
The UTC US112S/N is suitable to fit all modes of
control found in applications such as overvoltage
crowbar protection, motor control circuits in power
tools and kitchen aids, in-rush current limiting circuits,
capacitive discharge ignition, voltage regulation
circuits...
SCR
1
TO-220
1: CATHODE
2: ANODE
3: GATE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak off-state voltages
US112S/N-4
US112S/N-6
US112S/N-8
RMS on-state current (180° conduction angle) (Tc = 105°C)
Average on-state current (180° conduction angle) (Tc = 105°C)
Non repetitive surge peak on-state current (Tj = 25°C)
tp=8.3ms
tp=10ms
I²t Value for fusing (tp = 10 ms, Tj = 25°C)
Critical rate of rise of on-state current
(IG = 2 x IGT , tr
≤
100 n s, F = 60 Hz , Tj = 125°C,)
Peak gate current (tp=20µs, Tj = 125°C)
Maximum peak reverse gate voltage
Average gate power dissipation (Tj = 125°C)
Storage junction temperature range
Operating junction temperature range
V
DRM
V
RRM
I
T(RMS)
I
T(AV)
I
TSM
I²t
dI/dt
I
GM
V
RGM
P
G(AV)
Tstg
Tj
400
600
800
12
8
146
140
98
50
4
5
1
-40 ~ +150
-40 ~ +125
V
A
A
A
A²S
A/µs
A
V
W
°C
°C
SYMBOL
RATING
US112S
US112N
UNIT
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-013,B
UTC US112S/N
UTC US112S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
SCR
TEST CONDITIONS
V
D
= 12 V, R
L
=140
Ω
V
D
= 12 V, R
L
=140
Ω
PARAMETER
Gate trigger Current
Gate trigger Voltage
Gate non-trigger voltage
Reverse gate voltage
Holding Current
Latching Current
Circuit Rate Of Change Of
off-state Voltage
On-state voltage
SYMBOL
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
MIN
MAX.
200
0.8
UNIT
µA
V
V
V
D
= V
DRM,
R
L
= 3.3 kΩ, R
GK
= 1kΩ
Tj = 125°C
I
RG
= 10 µA
I
T
= 50 mA, R
GK
= 1 k
Ω
I
G
= 1 mA ,R
GK
= 1 k
Ω
0.1
8
5
6
5
1.6
0.85
30
5
2
V
mA
mA
V/µs
V
V
mΩ
µA
mA
V
D
= 67 % V
DRM
,
R
GK
= 220
Ω
Tj = 125°C
I
TM
= 24A, t
p
= 380 µs,
Tj = 25°C
Tj = 125°C
Tj = 125°C
Threshold Voltage
Dynamic Resistance
Off-state Leakage Current
V
DRM
= V
RRM,
R
GK
= 220
Ω
Tj = 25°C
Tj = 125°C
UTC US112N(STANDARD) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
Gate trigger Current
Gate trigger Voltage
Gate non-trigger voltage
Holding Current
Latching Current
Circuit Rate Of Change Of
off-state Voltage
On-state voltage
SYMBOL
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
TEST CONDITIONS
V
D
= 12 V, R
L
=33
Ω
V
D
= 12 V, R
L
=33
Ω
MIN
2
MAX.
15
1.3
UNIT
mA
V
V
V
D
= V
DRM,
R
L
= 3.3 kΩ
,
Tj = 125°C
I
T
= 500 mA, Gate open
I
G
= 1.2 I
GT
0.2
30
60
200
1.6
0.85
30
5
2
mA
mA
V/µs
V
V
mΩ
µA
mA
V
D
= 67 % V
DRM
,
Gate open, Tj = 125°C
I
TM
= 24A, t
p
= 380 µs,
Tj = 25°C
Tj = 125°C
Tj = 125°C
Threshold Voltage
Dynamic Resistance
Off-state Leakage Current
V
DRM
= V
RRM,
Tj = 25°C
Tj = 125°C
THERMAL RESISTANCES
PARAMETER
Junction to case (DC)
Junction to ambient
SYMBOL
R
th(j-c)
R
th(j-a)
VALUE
1.3
60
UNIT
KW
K/W
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-013,B
UTC US112S/N
Figure.1:Maximum average power
dissipation vs average on-state current.
14
12
10
SCR
Figure.2:Average and D.C. on-state current
vs case temperature
DC
12
11
10
9
8
7
6
5
4
3
2
1
0
P(W)
IT(av)(A)
α=180°
α=180°
8
6
360°
4
2
IT(av)(A)
0
1
2
3
4
5
6
α
7
8
9
Tcase(℃)
0
0
25
50
75
100
12
5
Fig.3-1:Relative variation of thermal impedance
junction to case vs pulse duration.
K=<Zth(j-c)/Rth(j-c)>
1.00
Fig.3-2:Relative variation of thermal impedance
junction to ambient vs pulseduration (recommended
pad layout,FR4 PC board)
K=<Zth(j-a)/Rth(j-a)>
1.0
0.5
0.10
0.2
0.1
1E-3
tp(s)
1E-2
1E-1
1E+0
0.01
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2
5E+2
Figure.4-1:Relative variation of gate trigger
current,holding current and latching vs
junction temperature (US112S)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
-20
0
20
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
Figure.4-2: Relative variation of gate trigger
current,holding current and latching current vs
junction temperature (US112N).
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
2.4
2.2
IGT
IH&IL
Rgk=1kΩ
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
60
80
100
120
140
0.0
-40
-20
IGT
IH&IL
Tj(℃)
40
Tj(℃)
0
20
40
60
80
100
120
140
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-013,B
UTC US112S/N
Figure.5:Relative variation of holding current vs
gate-cathode resistance(typical values)
(US112S)
Ta=25℃
10.0
SCR
Fig.6: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values) (US112S)
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
Tj=125℃
VD=0.67* VDRM
IH(Rgk)/IH(Rgk=1kΩ)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
Rgk(kΩ)
1E-1
1E+0
1E+1
0.1
0.0
0.2
Rgk(Ω)
0.4
0.6
0.8
1.0
1.2
1E-2
Fig.7: Relative variation of dV/dt immunity vs gate-
cathode capacitance(typical values) (US112S)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
Cgk(nF)
75
100
125
150
1.0
dV/dt(Cgk)/dV/dt(Rgk=220Ω)
VD=0.67* VDRM
Tj=125℃
Rgk=220Ω
10.0
Fig.8: Surge peak on-state current vs number of cycles
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
Tj=125℃
VD=0.67* VDRM
Rgk(Ω)
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Fig.9:Non-repetitive surge peak on-state current for a
sinusoidal pulse with width tp<10ms, and corresponding
2
values of I t.
2000
1000
ITSM(A),I t(A s)
ITSM
Tjinitial=25℃
US112N
dI/dt
limitation
100
US112S
US112N
I t
US112S
tp(ms)
10
0.01
0.10
1.00
10.00
1
0.0
2
2
2
Fig.10: On-state characteristics(maximum values).
200
100
ITSM
Tj=max:
Vto=0.85V
Rd=30mΩ
Tj=Tjmax.
10
Tj=25℃
VTM(V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-013,B
UTC US112S/N
SCR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
5
QW-R301-013,B
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

US112N-8 Related Products

US112N-8 US112N-4 US112N-6 US112S-4 US112S-6 US112S-8
Description Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN Silicon Controlled Rectifier, 12A I(T)RMS, 12000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB, TO-220, 3 PIN
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Parts packaging code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Critical rise rate of minimum off-state voltage 200 V/us 200 V/us 200 V/us 200 V/us 200 V/us 200 V/us
Maximum DC gate trigger current 15 mA 15 mA 15 mA 0.2 mA 0.2 mA 0.2 mA
Maximum DC gate trigger voltage 0.8 V 0.8 V 0.8 V 0.8 V 0.8 V 0.8 V
Maximum holding current 30 mA 30 mA 30 mA 5 mA 5 mA 5 mA
JEDEC-95 code TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Maximum leakage current 2 mA 2 mA 2 mA 2 mA 2 mA 2 mA
On-state non-repetitive peak current 146 A 146 A 146 A 146 A 146 A 146 A
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum on-state current 12000 A 12000 A 12000 A 12000 A 12000 A 12000 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum rms on-state current 12 A 12 A 12 A 12 A 12 A 12 A
Off-state repetitive peak voltage 800 V 400 V 600 V 400 V 600 V 800 V
Repeated peak reverse voltage 800 V 400 V 600 V 400 V 600 V 800 V
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Trigger device type SCR SCR SCR SCR SCR SCR

Recommended Resources

transistorized flasher

Tracking voltage regulator circuit diagram consisting of multiple LM396 connected in series

PLL frequency synthesizer circuit

Parallel voltage stabilizing circuit

Application circuit of CSJ-R05B and microcontroller

【Contribute to C2000】Analysis of TMS320F2812 interrupt system and its C language programming
Interrupts are the core of any chip. Let's see how 2812 sets interrupts.[[i] This post was last edited by fxw451 on 2011-4-7 09:29[/i]]...
fxw451 Microcontroller MCU
Research and Application of Wireless Sensor Networks
Research and Application of Wireless Sensor Networks...
lorant RF/Wirelessly
A brief discussion on wiring techniques and essentials when drawing PCB
Author: Yipintangyuan Wiring is the most delicate and limited part of PCB design. Even engineers who have been wiring for more than ten years often feel that they can't do it, because they have seen a...
ohahaha PCB Design
STM8 short circuit problem
After the PCB was completed, only the capacitors, simulation part and reset circuit of the microcontroller were welded. Then the program was powered by a programmable power supply of 3.3V and the IAR ...
JNAN1397 stm32/stm8
MSP430 Comparator A uses CASHORT as a sample-and-hold device after the CASHORT is set
I just want to ask if the sample-and-hold function is very useful and where it is usually used....
jinchen Microcontroller MCU
【Tuya Sandwich Wi-Fi & BLE SoC NANO Main Control Board Trial】BK7231N Unboxing Report
The day after Children's Day, Tianjie told me that I had won the Tuya smart tablet. I had always wanted to try out the Tuya tablet, but I missed it due to time constraints. This time I was able to win...
HonestQiao RF/Wirelessly
Shortcut:   E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components

  1. SLEB19N4RM
  2. 240-032-3-15PCA6J7-18P
  3. 84784-928H
  4. TSOP1240SI3T
  5. 7108P4D9W3QE
  6. S2M
  7. BA2-B0-24-615-1DC-CG
  8. Y1745147R000D9R
  9. 1.5KE
  10. QR1812B806RE041W
  11. 1TS003BBB-1900-3503B-CT
  12. 1206W4F4991T5E

Popular Articles

  1. Shenzhen Textile: There is little room for polarizer prices to fall, and it is expected to remain stable and slightly decline in the future
  2. 26-Conveyor belt counting system based on single chip microcomputer
  3. Würth Elektronik offers high-power wireless power transmission technology for industrial environments
  4. 39-Thermistor temperature measurement design based on 51 single chip microcomputer
  5. Design of eight-way buzzer-beater based on 51 single-chip microcomputer
  6. Gartner predicts that chip shortages will cause 50% of the top ten automakers to design their own chips by 2025
  7. Infineon Technologies expands wireless product portfolio
  8. Requirements for DC/DC converters
  9. Working principle of capacitance current tester
  10. Oscilloscope measurement of infrared remote control crystal

Technical ResourceMore

  1. Computer Control Technology Courseware
  2. AVR Minimum System Board Data
  3. Quality Management System Summary
  4. Design of special composite light source lighting system for LCD screen ITO glass appearance inspection
  5. Adaptive parallel multiple access interference cancellation based on improved LMS
  6. Analysis on the causes of malfunction of RCS-915AB busbar differential backup protection and its preventive measures
  7. Digital Logic Circuits of Dongda University (Lessons 56-60)
  8. Summary of Commonly Used Chip Resistors
  9. Application of ultra-high-speed switchgear in large-capacity distribution substations
  10. Using UART as a slave node of LIN bus

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 2579  2480  234  2822  556  52  50  5  57  12 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号