X28HC256PI-12 datasheet, PDF - EEWORLD Datasheet

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X28HC256PI-12: DescriptionEEPROM, 32KX8, 120ns, Parallel, CMOS, PDIP28, PLASTIC, DIP-28; Categorystorage storage; File Size190KB，23 Pages; ManufacturerXicor Inc.

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X28HC256PI-12 Overview

EEPROM, 32KX8, 120ns, Parallel, CMOS, PDIP28, PLASTIC, DIP-28

X28HC256PI-12 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Xicor Inc.
package instruction	DIP, DIP28,.6
Reach Compliance Code	unknown
Maximum access time	120 ns
Other features	100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION
command user interface	NO
Data polling	YES
Data retention time - minimum	100
Durability	1000000 Write/Erase Cycles
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
length	36.45 mm
memory density	262144 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	32KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
page size	128 words
Parallel/Serial	PARALLEL
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	4.82 mm
Maximum standby current	0.0005 A
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
switch bit	YES
width	15.24 mm
Maximum write cycle time (tWC)	5 ms

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256K

X28HC256

5 Volt, Byte Alterable EEPROM

DESCRIPTION

32K x 8 Bit

FEATURES

• Access time: 70ns

• Simple byte and page write

—Single 5V supply

—No external high voltages or V

control circuits

—Self-timed

—No erase before write

—No complex programming algorithms

—No overerase problem

• Low power CMOS

—Active: 60mA

—Standby: 500µA

• Software data protection

—Protects data against system level inadvertent

writes

• High speed page write capability

• Highly reliable Direct Write

™

cell

—Endurance: 1,000,000 cycles

—Data retention: 100 years

• Early end of write detection

—DATA polling

—Toggle bit polling

The X28HC256 is a second generation high perfor-

mance CMOS 32K x 8 EEPROM. It is fabricated with

Xicor’s proprietary, textured poly ﬂoating gate technol-

ogy, providing a highly reliable 5 Volt only nonvolatile

memory.

The X28HC256 supports a 128-byte page write opera-

tion, effectively providing a 24µs/byte write cycle, and

enabling the entire memory to be typically rewritten in

less than 0.8 seconds. The X28HC256 also features

DATA Polling and Toggle Bit Polling, two methods of

providing early end of write detection. The X28HC256

also supports the JEDEC standard Software Data Pro-

tection feature for protecting against inadvertent writes

during power-up and power-down.

Endurance for the X28HC256 is speciﬁed as a mini-

mum 1,000,000 write cycles per byte and an inherent

data retention of 100 years.

BLOCK DIAGRAM

256Kbit

EEPROM

Array

X Buffers

Latches and

Decoder

–A

Address

Inputs

Y Buffers

Latches and

DECODER

I/O Buffers

and Latches

Control

Logic and

Timing

I/O

–I/O

Data Inputs/Outputs

REV 1.1 2/1/01

www.xicor.com

Characteristics subject to change without notice.

1 of 23

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