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FHZ16VA

Description
Zener Diode, 16V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA, GLASS, MINIMELF-2
CategoryDiscrete semiconductor    diode   
File Size316KB,3 Pages
ManufacturerFenghua (HK) Electronics Ltd.
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FHZ16VA Overview

Zener Diode, 16V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-213AA, GLASS, MINIMELF-2

FHZ16VA Parametric

Parameter NameAttribute value
MakerFenghua (HK) Electronics Ltd.
Parts packaging codeDO-213AA
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance40 Ω
JEDEC-95 codeDO-213AA
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage16 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance1%
Working test current5 mA
广东肇庆风华新谷微电子有限公司
广东省肇庆市风华路
18
号风华电子工业城三号楼一楼
TEL:0758-2865088 2865091
FAX:0758-2849749
FHZ2V4~FHZ39V
Silicon Z-Diodes
Features
Very sharp reverse characteristic
Very high stability
Low reverse current level
V
Z
-tolerance ± 5%
Applications
Voltage stabilization
Absolute Maximum Ratings
Parameter
Power dissipation
耗散功率
Z-current
稳压电流
Junction temperature
结温
Storage temperature range
储存温度
Test Conditions
R
thJA
<300K/W,
T
amb
=25°C
Type Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
-65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
Parameter
Test Conditions
Symbol Value Unit
R
thJA
500
K/W
Junction ambient on PC board 50mmx50mmx1.6mm
Electrical Characteristics
Parameter
Forward voltage
Test Conditions Type Symbol Min Typ Max Unit
I
F
=100mA
V
F
1.2
V
Type
V
Znom1)
Test
current
I
ZT
Maximum
zeber
Impedance
Z
ZT
Z
ZK
at
at I
ZT
I
ZK
=1mA
I
R
µA
50
10
Maximum
Reverse
Leakage
Current
Test-Voltage
Volts
1.0
1.0
Forward
Voltage
V
f
at
I
f
=100mA
V
1.2
1.2
Temperature
coefficient
V
FHZ2V4 2.28-2.56
FHZ2V7
2.5-2.9
mA
5
5
Ohm
85
85
Ohm
600
600
%/°C
-0.070
-0.070
Page 0 of 3
*2005
年第
2
版*
All Rights Reserved
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