DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
BC559
PNP general purpose transistor
Product data sheet
Supersedes data of 1999 May 28
2004 Nov 05
NXP Semiconductors
Product data sheet
PNP general purpose transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 30 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-92 (SOT54) plastic package.
NPN complement: BC549.
1
handbook, halfpage
BC559
PINNING
PIN
1
2
3
emitter
base
collector
DESCRIPTION
2
3
3
2
1
MAM281
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BC559C
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−30
−30
−5
−100
−200
−200
500
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2004 Nov 05
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
V
BE
C
c
f
T
F
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain; BC559C
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure; BC559C
CONDITIONS
V
CB
=
−30
V; I
E
= 0 A
V
CB
=
−30
V; I
E
= 0 A; T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V; I
C
=
−2
mA; see Fig.2
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA
I
C
=
−10
mA; I
B
=
−0.5
mA; note 1
I
C
=
−100
mA; I
B
=
−5
mA; note 1
V
CE
=
−5
V; I
C
=
−2
mA; note 2
V
CE
=
−5
V; I
C
=
−10
mA; note 2
V
CB
=
−10
V; I
E
= i
e
= 0 A; f = 1 MHz
V
CE
=
−5
V; I
C
=
−200 μA;
R
S
= 2 kΩ;
f = 30 Hz to 15.7 kHz
V
CE
=
−5
V; I
C
=
−200 μA;
R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
Notes
1. V
BEsat
decreases by about
−1.7
mV/K with increasing temperature.
2. V
BE
decreases by about
−2
mV/K with increasing temperature.
MIN.
−
−
−
420
−
−
−
−
−600
−
−
−
−
TYP.
−1
−
−
−
−60
−180
−750
−930
−650
−
4
−
−
−
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
250
BC559
UNIT
K/W
MAX.
−15
−4
−100
800
−300
−650
−
−
−750
−820
−
−
4
4
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
MHz
dB
dB
V
CB
=
−5
V; I
E
=
−10
mA; f = 100 MHz 100
2004 Nov 05
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
BC559
handbook, full pagewidth
600
MBH728
hFE
500
VCE =
−5
V
400
300
200
100
0
−10
−2
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
BC559C.
Fig.2 DC current gain; typical values.
2004 Nov 05
4
NXP Semiconductors
Product data sheet
PNP general purpose transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
BC559
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.55
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L
1(1)
max.
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
JEITA
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
2004 Nov 05
5
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