ZHCS1000TC datasheet, PDF - EEWORLD Datasheet

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ZHCS1000TC: DescriptionRectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor diode; File Size169KB，3 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZHCS1000TC Overview

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, SOT-23, 3 PIN

ZHCS1000TC Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Diodes Incorporated
package instruction	SOT-23, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	12 weeks
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.6 V
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	12 A
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	40 V
Maximum reverse recovery time	0.012 µs
surface mount	YES
technology	SCHOTTKY
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40

ZHCS1000TC Preview

SOT23 SILICON HIGH CURRENT

SCHOTTKY BARRIER DIODE ”SuperBAT”

ISSUE 2 - OCTOBER 1997

ZHCS1000

FEATURES:

•

High current capability

•

Low V

APPLICATIONS:

•

Mobile telecomms, PCMIA & SCSI

•

DC-DC Conversion

PARTMARKING DETAILS : ZS1

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Continuous Reverse Voltage

Forward Current

Forward Voltage @ I

= 1000mA(typ)

Average Peak Forward Current;D.C.= 50%

Non Repetitive Forward Current t≤100µs

t≤10ms

Power Dissipation at T

amb

= 25° C

Storage Temperature Range

Junction Temperature

SYMBOL

FAV

FSM

tot

stg

VALUE

1000

425

1750

5.2

500

-55 to + 150

125

SOT23

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25° C unless otherwise stated).

PARAMETER

Reverse Breakdown

Voltage

Forward Voltage

SYMBOL

(BR)R

MIN.

TYP.

240

265

305

355

390

425

495

420

270

290

340

400

450

500

600

—

100

MAX.

UNIT

µA

CONDITIONS.

= 300µA

50mA*

100mA*

250mA*

500mA*

750mA*

1000mA*

1500mA*

1000mA,T

= 100° C

Reverse Current

Diode Capacitance

Reverse Recovery

Time

= 30V

f= 1MHz,V

= 25V

switched from

= 500mA to I

500mA

Measured at I

= 50mA

*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle

≤2%

ZHCS1000

TYPICAL CHARACTERISTICS

100m

IR - Reverse Current (A)

10m

+125°C

IF - Forward Current (A)

100u

+100°C

100m

+50° C

10u

100n

+25°C

10m

+125°C

+25°C

-55°C

-55° C

0.1

0.2

0.3

0.4

0.5

0.6

10n

VF - Forward Voltage (V)

VR - Reverse Voltage (V)

v V

Typical

PF(av) - Avg Pwr Diss (W)

0.8

0.6

Typical

Tj=125°C

IF(av) - Avg Fwd Cur (A)

D=t

F(pk)

F(av)

=D x I

F(pk)

0.6

D=0.5

D=0.2

0.4

D=t

0.4

F(pk)

D=0.1

0.2

D=0.5

D=0.2

D=0.1

D=0.05

0.2

D=0.05

=D x

F(av)

F(pk)

105

115

125

0.4

P =I

F(av)

0.8

1.2

TC - Case Temperature (°C)

IF(av) - Avg Fwd Curr (A)

F(av)

v T

125

200

F(av)

v I

F(av)

100

Rth=100° C/W

Rth=200° C/W

Rth=300° C/W

CD - Diode Capacitance (pF)

Ta - Ambient Temp (°C)

Typical

100

VR - Reverse Voltage (V)

v V

ZHCS1000

TYPICAL CHARACTERISTICS

MAXIMUM TRANSIENT THERMAL RESISTANCE

* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.

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