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Datasheet> All Categories > Discrete semiconductor> The transistor> FDG311N_NL
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FDG311N_NL

Description
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size85KB，5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

FDG311N_NL Overview

Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

FDG311N_NL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)1.9 A
Maximum drain current (ID)1.9 A
Maximum drain-source on-resistance0.105 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.75 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

FDG311N_NL Preview

FDG311N
February 2000
FDG311N
N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
Features
•
1.9 A, 20 V. R
DS(ON)
= 0.115
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.150
Ω
@ V
GS
= 2.5 V.
•
•
•
Low gate charge (3nC typical).
High performance trench technology for extremely low
R
DS(ON)
.
Compact industry standard SC70-6 surface mount
package.
Applications
•
•
•
Load switch
Power management
DC/DC converter
D
D
S
1
6
2
5
SC70-6
D
D
G
3
4
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25 C unless otherwise noted
Parameter
Ratings
20
(Note 1a)
Units
V
V
A
W
°C
±8
1.9
6
0.75
0.48
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking
.
11
Device
FDG311N
Reel Size
7
Tape Width
8mm
Quantity
3000 units
2000
Fairchild Semiconductor Corporation
FDG311N Rev. D
FDG311N
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
I
GSS
T
A
= 25 C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
Min
20
Typ
Max Units
V
Off Characteristics
14
1
100
-100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 4.5 V,
V
GS
= 4.5 V,
I
D
= 1.9 A
I
D
= 1.9 A,
T
J
= 125°C
V
GS
= 2.5 V, I
D
= 1.6 A
V
GS
= 4.5 V, V
DS
= 5 V
0.4
0.9
-3
1.5
V
mV/°C
Ω
0.082 0.115
0.110 0.170
0.105
4
6
0.150
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
A
S
V
DS
= 5 V, I
D
= 0.5 A
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
270
55
20
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 5 V, R
GEN
= 6
Ω
5
9
10
2
12
17
18
6
4.5
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V, I
D
= 1.9 A,
V
GS
= 4.5 V
3
0.6
0.9
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 0.42 A
(Note 2)
0.42
0.7
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) 170°C/W when mounted on a 1 in
2
pad of 2oz copper.
b) 260°C/W when mounted on a minimum pad.
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDG311N Rev. D
FDG311N
Typical Characteristics
10
V
GS
= 4.5V
3.5V
3.0V
2.5V
6
2.0V
4
2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
1.6
1.4
2.5V
1.2
1
0.8
3.0V
3.5V
4.0V
4.5V
V
GS
= 2.0V
I
D
, DRAIN CURRENT (A)
8
2
1.5V
0
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.32
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 1.9A
V
GS
= 4.5V
I
D
= 1A
0.28
0.24
0.2
0.16
0.12
0.08
0.04
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
A
= 25
o
C
1.4
1.2
1
T
A
= 125
o
C
0.8
0.6
-50
-25
0
25
50
75
100
o
125
150
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
10
125 C
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
8
T
A
= -55
o
C 25
o
C
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
V
GS
= 0V
1
T
A
= 125
o
C
0.1
25
o
C
-55
o
C
0.01
6
4
2
0.001
0
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG311N Rev. D
FDG311N
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 1.9A
4
(continued)
500
V
DS
= 5V
10V
CAPACITANCE (pF)
400
C
ISS
f = 1MHz
V
GS
= 0 V
15V
3
300
2
200
1
100
C
OSS
C
RSS
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Q
g
, GATE CHARGE (nC)
0
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
10
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
1ms
10ms
POWER (W)
1
10s
DC
0.1
V
GS
= 4.5V
SINGLE PULSE
o
R
θJA
= 260 C/W
T
A
= 25 C
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
o
30
SINGLE PULSE
24
R
θ
JA
= 260 C/W
T
A
= 25 C
o
o
100ms
1s
18
12
6
0
0.0001
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.5
D = 0.5
0.2
R
θ
JA
(t) = r(t) * R
θ
JA
R
JA
=260 C/W
θ
P(pk)
0.1
0.05
0.1
0.05
0.01
0.02
Single Pulse
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/ t
2
0.01
0.005
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDG311N Rev. D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E
2
CMOS
TM
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
HiSeC™
DISCLAIMER
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
www.fairchildsemi.com
Rev. D
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